ZHCSCK8H May 2014 – April 2025 LP8860-Q1
PRODUCTION DATA
Schematic on Figure 7-3 shows the critical part of circuitry: boost components, the LP8860-Q1 internal charge pump for gate driver powering and powering/grounding of LP8860-Q1 boost components. Layout example for this is shown in Figure 7-15.
Figure 7-3 Critical Components for Design| REFERENCE DESIGNATOR | DESCRIPTION | NOTE |
|---|---|---|
| R1 | 20 m? 3 W | Input current sensing resistor |
| R2 | 20 k? 0.1 W | Power-line FET gate pullup resistor |
| R3 | 10 ? 0.1 W | Gate resistor for boost FET |
| R4 | 10 ? 0.1 W | Current sensing filter resistor |
| R5 | 25 m? 3 W | Boost current sensing resistor |
| C1 | 1 μF 10 V ceramic capacitor | VDD bypass capacitor |
| C2 | 10 μF 16 V ceramic capacitor | Charge pump output capacitor |
| C3 | 33 μF 50 V electrolytic capacitor | Boost input capacitor |
| C4 | 10 μF 50 V ceramic capacitor | Boost input capacitor |
| C5 | 1 μF 10 V ceramic capacitor | Flying capacitor |
| C6 | 1000 pF 10 V ceramic capacitor | Current sensing filter capacitor |
| C7 | 39 pF 50 V ceramic capacitor | High frequency bypass capacitor |
| C8 | 33 μF 50 V electrolytic capacitor | Boost output capacitor |
| C9 | 10 μF 100 V ceramic capacitor | Boost output capacitor |
| L1 | 22 μH saturation current 9 A | Boost inductor |
| D1 | 60 V 15 A Schottky diode | Boost Schottky diode |
| Q1 | 60 V 10 A pMOSFET | Power-line FET |
| Q2 | 60 V 15 A nMOSFET | Boost nMOSFET |