ZHCSCK8H May 2014 – April 2025 LP8860-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| IL,VSENSE_P | VSENSE_P pin leakage current | VSENSE_P = 48 V | 0.1 | 3 | μA | |
| IL,VSENSE_N | VSENSE_N pin leakage current | VSENSE_N = 48 V | ||||
| IL,SD | SD pin leakage current | VSD = 48 V | ||||
| ISD PFET | Pulldown current for power-line p-FET, NMOS_PLFET_EN=0 | PL_SD_SINK_LEVEL = 00 PL_SD_SINK_LEVEL = 01 PL_SD_SINK_LEVEL = 10 PL_SD_SINK_LEVEL = 11 | 55 110 220 440 | μA | ||