ZHCSCK8H May 2014 – April 2025 LP8860-Q1
PRODUCTION DATA
An nFET transistor with high enough voltage rating (VDS at least 5 V higher than maximum output voltage) must be used. Current rating for the FET must be the same as the inductor peak current. Gate-drive voltage for the FET is VDD or about 2 x VDD, if the charge pump is enabled (EEPROM selection).