The DRV7308 is a three-phase IPM, with three integrated half-H-bridge 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/PMSM motors up to 450V DC rails. The device applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device integrates pre-drivers for all GaN FETs with slew rate control of phase node voltages. The low R_{DS_ON}, slew rate control, zero reverse recovery, and low output capacitance help achieve more than 99% efficiency for a 3-phase modulated, FOC driven, 250W motor drive application, eliminating the need for heat sink.

The device integrates a suite of protections including overcurrent limit, overtemperature protection, overcurrent protection for low-side GaN FETs, undervoltage protection for the GVDD and bootstrap power supplies, and adaptive dead time insertion to avoid shoot through conditions.

The device integrates a bootstrap rectifier with an integrated GaN FET and a transient current limit, which eliminates the need for an external boot diode. The DRV7308 brings out all three low-side source pins of the GaN FETs to support 3-,2-, or 1-shunt current sensing. The device integrates an 11MHz, 15V/μs operational amplifier for single shunt current sensing in FOC and trapezoidal control of BLDC motors.

The low dead time helps achieve ultra quiet operations in BLDC/PMSM motors. The low propagation delay helps achieve lower distortion and accurate average current sensing.

The DRV7308 is available in a VQFN 12mm x 12mm package.