ZHCSGV6F June 2009 – January 2017 TMS320C6742
PRODUCTION DATA.
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
High-speed (HS) bypass capacitors are critical for proper DDR2/mDDR interface operation. It is particularly important to minimize the parasitic series inductance of the HS bypass cap, DSP/DDR2/mDDR power, and DSP/DDR2/mDDR ground connections. Table 6-30 contains the specification for the HS bypass capacitors as well as for the power connections on the PCB.
| NO. | PARAMETER | MIN | MAX | UNIT |
|---|---|---|---|---|
| 1 | HS Bypass Capacitor Package Size(1) | 0402 | 10 Mils | |
| 2 | Distance from HS bypass capacitor to device being bypassed | 250 | Mils | |
| 3 | Number of connection vias for each HS bypass capacitor | 2(4) | Vias | |
| 4 | Trace length from bypass capacitor contact to connection via | 1 | 30 | Mils |
| 5 | Number of connection vias for each DDR2/mDDR device power or ground balls | 1 | Vias | |
| 6 | Trace length from DDR2/mDDR device power ball to connection via | 35 | Mils | |
| 7 | DDR_DVDD18 Supply HS Bypass Capacitor Count(2) | 10 | Devices | |
| 8 | DDR_DVDD18 Supply HS Bypass Capacitor Total Capacitance | 0.6 | μF | |
| 9 | DDR#1 HS Bypass Capacitor Count(2) | 8 | Devices | |
| 10 | DDR#1 HS Bypass Capacitor Total Capacitance | 0.4 | μF | |
| 11 | DDR#2 HS Bypass Capacitor Count(2)(3) | 8 | Devices | |
| 12 | DDR#2 HS Bypass Capacitor Total Capacitance(3) | 0.4 | μF |