4 修訂歷史記錄
Changes from H Revision (January 2018) to I Revision
- 從數據表標題中刪除了“NRND”Go
- 刪除了 NRND 披露聲明Go
Changes from G Revision (January 2016) to H Revision
- 將數據表標題從“用于增強模式 GaN FET 的 LM5113 100V、1.2A/5A 半橋柵極驅動器”更改成了“LM5113 80V、1.2A、5A 半橋 GaN 驅動器”Go
- 在數據表中添加了“不建議用于新設計”聲明Go
- 增加內容到說明部分Go
- 更改了第一頁的重要圖形 Go
- Removed HB to VDD parameter from the Absolute Maximum Ratings tableGo
- Changed the HS to VSS maximum from: 100 V to: 93 VGo
- Changed the HB to VSS maximum from: 107 V to: V(HS) + 7 VGo
- Changed the human-body model value from: ±2000 to: ±1000Go
- Changed HS maximum from: 100 V to: 90 V Go
- Changed the Functional Block DiagramGo
- Changed the last paragraph and add new images to the Input and Output section Go
- Added content to the Start-up and UVLO section Go
Changes from F Revision (April 2013) to G Revision
- 添加了 ESD 額定值 表、特性 說明部分、器件功能模式、應用和實施部分、電源相關建議部分、布局部分、器件和文檔支持部分以及機械、封裝和可訂購信息部分Go
Changes from E Revision (April 2013) to F Revision
- 將美國國家半導體數據表的版面布局更改成了 TI 格式Go