ZHCSEV7I June 2011 – October 2019 LM5113
PRODUCTION DATA.
Due to the intrinsic feature of enhancement mode GaN FETs, the source-to-drain voltage of the bottom switch, is usually higher than a diode forward voltage drop when the gate is pulled low. This will cause negative voltage on HS pin. Moreover, this negative voltage transient will be even worse, considering layout and device drain/source parasitic inductances. With high side driver using the floating bootstrap configuration, Negative HS voltage can lead to an excessive bootstrap voltage which can damage the high-side GaN FET. The LM5113 solves this problem with an internal clamping circuit that prevents the bootstrap voltage from exceeding 5.2 V typical.