ZHCSEV7I June 2011 – October 2019 LM5113
PRODUCTION DATA.
The LM5113 is a high frequency high- and low- side gate driver for enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The LM5113 has split gate outputs with strong sink capability, providing flexibility to adjust the turnon and turnoff strength independently.
The LM5113 can operate up to several MHz, and available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.