ZHCSEV7I June 2011 – October 2019 LM5113
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機(jī)械、封裝和可訂購信息
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購信息
8.2.2.1 VDD Bypass Capacitor
The VDD bypass capacitor provides the gate charge for the low-side and high-side transistors and to absorb the reverse recovery charge of the bootstrap diode. The required bypass capacitance can be calculated with Equation 1.
QgH and QgL are gate charge of the high-side and low-side transistors respectively. Qrr is the reverse recovery charge of the bootstrap diode, which is typically around 4 nC. ΔV is the maximum allowable voltage drop across the bypass capacitor. A 0.1-µF or larger value, good-quality, ceramic capacitor is recommended. The bypass capacitor should be placed as close to the pins of the IC as possible to minimize the parasitic inductance.