ZHCSI91B November 2017 – July 2018 DRV8304
UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 3-Phase Smart Gate Drivers
- 7.3.2 DVDD Linear Voltage Regulator
- 7.3.3 Pin Diagrams
- 7.3.4 Low-Side Current-Shunt Amplifiers
- 7.3.5 Gate-Driver Protection Circuits
- 7.4 Device Functional Modes
- 7.5 Programming
- 7.6
Register Maps
- Table 1. DRV8304S Register Map
- 7.6.1 Status Registers (DRV8304S Only)
- 7.6.2
Control Registers (DRV8304S Only)
- 7.6.2.1 Driver Control Register (Address = 0x02) [reset = 0x00]
- 7.6.2.2 Gate Drive HS Register (Address = 0x03) [reset = 0x377]
- 7.6.2.3 Gate Drive LS Register (Address = 0x04) [reset = 0x777]
- 7.6.2.4 OCP Control Register (Address = 0x05) [reset = 0x145]
- 7.6.2.5 CSA Control Register (Address = 0x06) [reset = 0x283]
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機械、封裝和可訂購信息
封裝選項
請參考 PDF 數據表獲取器件具體的封裝圖。
機械數據 (封裝 | 引腳)
- RHA|40
散熱焊盤機械數據 (封裝 | 引腳)
- RHA|40
訂購信息
8.2.1.2.2 IDRIVE Configuration
The gate drive current strength, IDRIVE, is selected based on the gate-to-drain charge of the external MOSFETs and the target rise and fall times at the outputs. If IDRIVE is selected to be too low for a given MOSFET, then the MOSFET may not turn on completely within the tDRIVE time and a gate drive fault may be asserted. Additionally, slow rise and fall times will lead to higher switching power losses. TI recommends adjusting these values in system with the required external MOSFETs and motor to determine the best possible setting for any application.
The IDRIVEP and IDRIVEN current for both the low-side and high-side MOSFETs are independently adjustable on the SPI device through the SPI registers. On hardware interface devices, both source and sink settings are selected simultaneously on the IDRIVE pin.
For MOSFETs with a known gate-to-drain charge (Qgd), desired rise time (tr), and a desired fall time (tf), use Equation 7 and Equation 8 to calculate the value of IDRIVEP and IDRIVEN (respectively).
