10 Summary

The purpose of this study was to characterize the effect of heavy-ion irradiation on the single-event effect (SEE) performance of the DRV8351-SEP 40V Three Phase Half-Bridge Gate driver. Heavy-ions with LET_EFF =20 to 48MeV × cm² / mg were used for the SEE characterization campaign. Flux of approximately 10⁵ ions / cm² × s and fluences of approximately 10⁷ ions / cm² per run were used for the characterization. The SEE results demonstrated that the DRV8351-SEP exhibits cross confuction events that are explained in more detail in the sections above. The cross conduction events did not seem to damage the device or the MOSFETS. SEL and SEB LET_EFF = 48MeV × cm² / mg and across the full electrical specifications. Transients at LET_EFF = 48MeV × cm² / mg on GL/GH/SH are presented and discussed. CREME96-based worst week event-rate calculations for LEO(ISS) and GEO orbits for the DSEE and SET are presented for reference.