ZHCSD93A january 2015 – december 2020 UCC28700-Q1
PRODUCTION DATA
- 1
- 1 特性
- 2 應用
- 3 說明
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
-
8 Applications and Implementation
- 8.1 Application Information
- 8.2
Typical Application
- 8.2.1 Design Requirements
- 8.2.2
Detailed Design Procedure
- 8.2.2.1 Transformer Parameter Verification
- 8.2.2.2 Output Capacitance
- 8.2.2.3 VDD Capacitance, CDD
- 8.2.2.4 VDD Start-Up Resistance, RSTR
- 8.2.2.5 VS Resistor Divider, Line Compensation, and Cable Compensation
- 8.2.2.6 Input Bulk Capacitance and Minimum Bulk Voltage
- 8.2.2.7 Transformer Turns Ratio, Inductance, Primary-Peak Current
- 8.2.2.8 Standby Power Estimate
- 8.2.3 Application Curves
- 9 Power Supply Recommendations
- 10Layout
-
11Device and Documentation Support
- 11.1
Device Support
- 11.1.1
Device Nomenclature
- 11.1.1.1 Capacitance Terms in Farads
- 11.1.1.2 Duty Cycle Terms
- 11.1.1.3 Frequency Terms in Hertz
- 11.1.1.4 Current Terms in Amperes
- 11.1.1.5 Current and Voltage Scaling Terms
- 11.1.1.6 Transformer Terms
- 11.1.1.7 Power Terms in Watts
- 11.1.1.8 Resistance Terms in Ω
- 11.1.1.9 Timing Terms in Seconds
- 11.1.1.10 Voltage Terms in Volts
- 11.1.1.11 AC Voltage Terms in VRMS
- 11.1.1.12 Efficiency Terms
- 11.1.1
Device Nomenclature
- 11.2 Documentation Support
- 11.3 Trademarks
- 11.1
Device Support
- Mechanical, Packaging, and Orderable Information
8.2.2.1 Transformer Parameter Verification
The transformer turns ratio selected affects the MOSFET VDS and secondary rectifier reverse voltage so these should be reviewed. The UCC28700-Q1 controller requires a minimum on time of the MOSFET (TON) and minimum DMAG time (TDMAG) of the secondary rectifier in the high line, minimum load condition. The selection of FMAX, LP and RCS affects the minimum TON and TDMAG.
The secondary rectifier and MOSFET voltage stress can be determined by the equations below.
For the MOSFET VDS voltage stress, an estimated leakage inductance voltage spike (VLK) needs to be included.
The following equations are used to determine if the minimum TON target of 300 ns and minimum TDMAG target of 1.1 μs is achieved.
