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ZHCSLM3B August 2020 – May 2024 LP8864-Q1

PRODUCTION DATA

封裝選項

機械數據 (封裝 | 引腳)

RHB|32
- MPQF130D
DCP|38
- MPDS520B

散熱焊盤機械數據 (封裝 | 引腳)

RHB|32
- QFND589
DCP|38
- PPTD170A

訂購信息

5.5 Electrical Characteristics

Limits apply over the full operation temperature range –40°C ≤T_A ≤ +125°C , unless otherwise speicified_.V_IN = 12V_,VDD = 3.3V

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
General Electrical Characteristics
I_Q	Shutdown mode current, VDD pin	EN = L		1	5	μA
I_Q	Active mode current, VDD pin⁽¹⁾	FSW = 303 kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Disabled		15	65	mA
I_Q	Active mode current, VDD pin⁽¹⁾	FSW = 2200 kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Disabled		40	75	mA
I_Q	Active mode current, VDD pin⁽¹⁾	FSW = 303 kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Enabled		20	91	mA
I_Q	Active mode current, VDD pin⁽¹⁾	FSW = 2200 kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Enabled		65	104	mA
CPUMP and LDO Electrical Characteristics
V_CPUMP	Voltage accuracy	V_DD= 3.0 to 3.6V; I_LOAD = 1 to 50mA	4.8	5	5.2	V
f_CP	CP switching frequency		387	417	447	kHz
V_{CPUMP_UVLO}	VCPUMP UVLO threshold	V_CPUMP falling edge	3.95	4.2	4.4	V
V_{CPUMP_UVLO}	VCPUMP UVLO threshold	V_CPUMP rising edge	4.15	4.4	4.6	V
V_{CPUMP_HYS}	VCPUMP UVLO hysteresis		0.1	0.2		V
T_{START_UP}	Charge pump startup time	C_CPUMP = 10μF		1000	2000	μs
Protection Electrical Characteristics
VDD_{UVLO_F}	V_DD UVLO threshold	V_DD falling	2.68	2.8	2.92	V
VDD_{UVLO_R}	V_DD UVLO threshold	V_DD rising			3.0	V
VDD_{UVLO_H}	V_DD UVLO hysteresis			0.1		V
VIN_{UVLO_TH}	UVLO pin threshold	V_UVLO falling	0.753	0.777	0.801	V
I_UVLO	UVLO pin bias current	V_UVLO = V_{UVLO_TH} + 50mV		–5		μA
VIN_{OVP_TH}	OVP threshold	VSENSE_P rising	40.8	43	45.2	V
VIN_{OVP_HYS}	OVP hysteresis			1.7		V
VIN_{OCP_TH}	Input OCP threshold	R_ISENSE = 20mΩ	187	220	253	mV
T_SD	Thermal shutdown threshold⁽¹⁾	Temperature rising	150	165	180	°C
T_SD	Thermal shutdown hysteresis⁽¹⁾			20		°C
I_{SD_LEAKAGE}	SD leakage current	V_SD = 48V		1		μA
I_SD	SD pull down current	R_SD = 20kΩ	250	325	400	μA
V_{FB_OVPL}	FB pin - Boost OVP low threshold			1.423		V
V_{FB_OVPH}	FB pin - Boost OVP high threshold			1.76		V
V_{FB_UVP}	FB pin - Boost OCP threshold			0.886		V
V_{BST_OVPH}	Discharge pin - Boost OVP high threshold		48.5	50	51.8	V
Input PWM Electrical Characteristics
I_{PWM_LEAKAGE}	PWM leakage current	V_PWM = 5V		1		μA
f_{PWM_IN}	PWM input frequency		100		20000	Hz
t_{PWM_MIN_ON}	PWM input minimum on-time	Direct PWM mode			200	ns
t_{PWM_MIN_ON}	PWM input minimum on-time	Phase Shift PWM mode, Hybrid mode, Current Dimming mode		200	220	ns
PWM_IN_RES	PWM input resolution	f_{PWM_IN} = 100Hz		16		bit
PWM_IN_RES	PWM input resolution	f_{PWM_IN} = 20kHz		10		bit
LED Current Sink and LED PWM Electrical Characteristics
I_LEAKAGE	Leakage current on OUTx	OUTx = V_OUT = 45V, EN= L		0.1	2.5	μA
V_ISET	ISET voltage		1.17	1.21	1.25	V
I_MAX	Maximum LED sink current	OUTx		200		mA
V_{ISET_UVLO}	ISET pin undervoltage		0.97	1	1.03	V
R_ISET	ISET Resistor range	I_OUT= 30mA to 200mA	15.6		104	k?
I_{LED_LIMIT}	LED current limit when ISET pin short to GND			280		mA
I_ACC	LED sink current accuracy	R_ISET = 15.6k?, I_OUT = 150mA, PWM = 100%	-4		4	%
I_MATCH	LED sink current matching	R_ISET = 15.6k?, I_OUT = 150mA, PWM = 100%		1	3.5	%
f_DIM	LED dimming frequency	PWM_FSET =3.92kΩ	141	152	163	Hz
f_DIM	LED dimming frequency	PWM_FSET =4.75kΩ	283	305	327
f_DIM	LED dimming frequency	PWM_FSET =5.76kΩ	567	610	653
f_DIM	LED dimming frequency	PWM_FSET =7.87kΩ	1135	1221	1307
f_DIM	LED dimming frequency	PWM_FSET =11kΩ	2270	2441	2612
f_DIM	LED dimming frequency	PWM_FSET =17.8kΩ	4541	4883	5225
f_DIM	LED dimming frequency	PWM_FSET =42.4kΩ	9082	9766	10450
f_DIM	LED dimming frequency	PWM_FSET =124kΩ	18163	19531	20899
DIM	Dimming ratio	f_{PWM_OUT} = 152Hz		32000:1
DIM	Dimming ratio	f_{PWM_OUT} = 4.88kHz		1000:1
V_HEADROOM	LED sink headroom			0.7		V
V_{HEADROOM_HYS}	LED sink headroom hysteresis			0.8		V
V_LEDSHORT	LED internal short threshold			5.4		V
V_SHORTGND	LED short to ground threshold			0.24		V
t_{PWM_OUT}	LED output minimum pulse			200		ns
Boost Converter Electrical Characteristics
f_SW	Switching Frequency	BST_FSET =7.87kΩ	93	100	107	kHz
f_SW	Switching Frequency	BST_FSET =4.75kΩ	186	200	214	kHz
f_SW	Switching Frequency	BST_FSET =5.76kΩ	281	303	325	kHz
f_SW	Switching Frequency	BST_FSET =3.92kΩ	372	400	428	kHz
f_SW	Switching Frequency	BST_FSET =11kΩ	465	500	535	kHz
f_SW	Switching Frequency	BST_FSET =17.8kΩ	1690	1818	1946	kHz
f_SW	Switching Frequency	BST_FSET =42.4kΩ	1860	2000	2140	kHz
f_SW	Switching Frequency	BST_FSET =124kΩ	2066	2222	2378	kHz
V_ISNS	External FET current limit	V_ISNS threshold, R_SENSE= 15 to 50mΩ	180	200	220	mV
I_{SEL_MAX}	IDAC maximum current	V_DD = 3.3V	36.4	38.7	40.2	μA
R_{DS_ONH}	R_DSON of high-side FET to gate driver	V_GD/(R_{DS_ON} + total resistance to gate input of SW FET) must not be higher than 2.5A		1.4		?
R_{DS_ONL}	R_DSON of low-side FET to gate driver	V_GD/(R_{DS_ON} + total resistance to gate input of SW FET) must not be higher than 2.5A		0.75		?
t_STARTUP	Start-up time	Delay from beginning of boost Soft-start to when LED drivers can begin		50		ms
T_ON	Minimum switch on-time			150		ns
T_OFF	Minimum switch off time			150		ns

(1) This specification is not ensured by ATE