ZHCSR67 July 2020 DRV8353M
PRODUCTION DATA
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| GATE DRIVER | ||||
| Power supply pin voltage (VM) | –0.3 | 80 | V | |
| Voltage differential between ground pins (AGND, BGND, DGND, PGND) | –0.3 | 0.3 | V | |
| MOSFET drain sense pin voltage (VDRAIN) | –0.3 | 102 | V | |
| MOSFET drain sense pin voltage slew rate (VDRAIN) | 0 | 2 | V/μs | |
| Charge pump pin voltage (CPH, VCP) | –0.3 | VVDRAIN + 16 | V | |
| Charge-pump negative-switching pin voltage (CPL) | –0.3 | VVDRAIN | V | |
| Low-side gate drive regulator pin voltage (VGLS) | –0.3 | 18 | V | |
| Internal logic regulator pin voltage (DVDD) | –0.3 | 5.75 | V | |
| Digital pin voltage (ENABLE, GAIN, IDRIVE, INHx, INLx, MODE, nFAULT, nSCS, SCLK, SDI, SDO, VDS) | –0.3 | 5.75 | V | |
| Continuous high-side gate drive pin voltage (GHx) | –5(2) | VVCP + 0.3 | V | |
| Transient 200-ns high-side gate drive pin voltage (GHx) | –10 | VVCP + 0.3 | V | |
| High-side gate drive pin voltage with respect to SHx (GHx) | –0.3 | 16 | V | |
| Continuous high-side source sense pin voltage (SHx) | –5(2) | 102 | V | |
| Continuous high-side source sense pin voltage (SHx) | –5(2) | VVDRAIN + 5 | V | |
| Transient 200-ns high-side source sense pin voltage (SHx) | –10 | VVDRAIN + 10 | V | |
| Continuous low-side gate drive pin voltage (GLx) | –1.0 | VVGLS + 0.3 | V | |
| Transient 200-ns low-side gate drive pin voltage (GLx) | –5.0 | VVGLS + 0.3 | V | |
| Gate drive pin source current (GHx, GLx) | Internally limited | Internally limited | A | |
| Gate drive pin sink current (GHx, GLx) | Internally limited | Internally limited | A | |
| Continuous low-side source sense pin voltage (SLx) | –1 | 1 | V | |
| Transient 200-ns low-side source sense pin voltage (SLx) | –5 | 5 | V | |
| Continuous shunt amplifier input pin voltage (SNx, SPx) | –1 | 1 | V | |
| Transient 200-ns shunt amplifier input pin voltage (SNx, SPx) | –5 | 5 | V | |
| Reference input pin voltage (VREF) | –0.3 | 5.75 | V | |
| Shunt amplifier output pin voltage (SOx) | –0.3 | VVREF + 0.3 | V | |
| DRV8353M | ||||
| Ambient temperature, TA | –55 | 125 | °C | |
| Junction temperature, TJ | –55 | 150 | °C | |
| Storage temperature, Tstg | –65 | 150 | °C | |