ZHCSJ76A March 2018 – April 2019 DRV8343-Q1
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1
Three Phase Smart Gate Drivers
- 8.3.1.1
PWM Control Modes
- 8.3.1.1.1 6x PWM Mode (PWM_MODE = 000b or MODE Pin Tied to AGND)
- 8.3.1.1.2 3x PWM Mode (PWM_MODE = 001b or MODE Pin = 18 kΩ to AGND)
- 8.3.1.1.3 1x PWM Mode (PWM_MODE = 010b or MODE Pin = 75 kΩ to AGND)
- 8.3.1.1.4 Independent Half-Bridge PWM Mode (PWM_MODE = 011b or MODE Pin is > 1.5 MΩ to AGND or Hi-Z)
- 8.3.1.1.5 Phases A and B are Independent Half-Bridges, Phase C is Independent FET (MODE = 100b)
- 8.3.1.1.6 Phases B and C are Independent Half-Bridges, Phase A is Independent FET (MODE = 101b or MODE Pin is 75 kΩ to DVDD)
- 8.3.1.1.7 Phases A is Independent Half-Bridge, Phases B and C are Independent FET (MODE = 110b or MODE Pin is 18 kΩ to DVDD)
- 8.3.1.1.8 Independent MOSFET Drive Mode (PWM_MODE = 111b or MODE Pin = 0.47 kΩ to DVDD)
- 8.3.1.2 Device Interface Modes
- 8.3.1.3 Gate Driver Voltage Supplies
- 8.3.1.4 Smart Gate Drive Architecture
- 8.3.1.1
PWM Control Modes
- 8.3.2 DVDD Linear Voltage Regulator
- 8.3.3 Pin Diagrams
- 8.3.4 Low-Side Current Sense Amplifiers
- 8.3.5
Gate Driver Protective Circuits
- 8.3.5.1 VM Supply Undervoltage Lockout (UVLO)
- 8.3.5.2 VCP Charge Pump Undervoltage Lockout (CPUV)
- 8.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
- 8.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
- 8.3.5.5 Gate Driver Fault (GDF)
- 8.3.5.6 Thermal Warning (OTW)
- 8.3.5.7 Thermal Shutdown (OTSD)
- 8.3.5.8 Open Load Detection (OLD)
- 8.3.5.9 Offline Shorts Diagnostics
- 8.3.5.10 Reverse Supply Protection
- 8.3.1
Three Phase Smart Gate Drivers
- 8.4 Device Functional Modes
- 8.5 Programming
- 8.6
Register Maps
- 8.6.1 Status Registers
- 8.6.2
Control Registers
- 8.6.2.1 IC1 Control Register (Address = 0x04) [reset = 0x00]
- 8.6.2.2 IC2 Control Register (address = 0x05) [reset = 0x40]
- 8.6.2.3 IC3 Control Register (Address = 0x06) [reset = 0xFF]
- 8.6.2.4 IC4 Control Register (Address = 0x07) [reset = 0xFF]
- 8.6.2.5 IC5 Control Register (Address = 0x08) [reset = 0xFF]
- 8.6.2.6 IC6 Control Register (Address = 0x09) [reset = 0x99]
- 8.6.2.7 IC7 Control Register (Address = 0x0A) [reset = 0x99]
- 8.6.2.8 IC8 Control Register (Address = 0x0B) [reset = 0x99]
- 8.6.2.9 IC9 Control Register (Address = 0x0C) [reset = 0x2F]
- 8.6.2.10 IC10 Control Register (Address = 0x0D) [reset = 0x61]
- 8.6.2.11 IC11 Control Register (Address = 0x0E) [reset = 0x00]
- 8.6.2.12 IC12 Control Register (Address = 0x0F) [reset = 0x2A]
- 8.6.2.13 IC13 Control Register (Address = 0x10) [reset = 0x7F]
- 8.6.2.14 IC14 Control Register (Address = 0x10) [reset = 0x00]
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
9.2.2.2.1 Sense Amplifier Unidirectional Configuration
The sense amplifiers are configured to be unidirectional through the registers on SPI devices by writing a 0 to the VREF_DIV bit.
The sense amplifier gain and sense resistor values are selected based on the target current range, VREF, power rating of the sense resistor, and operating temperature range. In unidirectional operation of the sense amplifier, use Equation 18 to calculate the approximate value of the dynamic range at the output.
Equation 18. 
Use Equation 19 to calculate the approximate value of the selected sense resistor.
Equation 19. 
where
From Equation 18 and Equation 19, select a target gain setting based on the power rating of a target sense resistor.