ZHCSJ76A March 2018 – April 2019 DRV8343-Q1
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1
Three Phase Smart Gate Drivers
- 8.3.1.1
PWM Control Modes
- 8.3.1.1.1 6x PWM Mode (PWM_MODE = 000b or MODE Pin Tied to AGND)
- 8.3.1.1.2 3x PWM Mode (PWM_MODE = 001b or MODE Pin = 18 kΩ to AGND)
- 8.3.1.1.3 1x PWM Mode (PWM_MODE = 010b or MODE Pin = 75 kΩ to AGND)
- 8.3.1.1.4 Independent Half-Bridge PWM Mode (PWM_MODE = 011b or MODE Pin is > 1.5 MΩ to AGND or Hi-Z)
- 8.3.1.1.5 Phases A and B are Independent Half-Bridges, Phase C is Independent FET (MODE = 100b)
- 8.3.1.1.6 Phases B and C are Independent Half-Bridges, Phase A is Independent FET (MODE = 101b or MODE Pin is 75 kΩ to DVDD)
- 8.3.1.1.7 Phases A is Independent Half-Bridge, Phases B and C are Independent FET (MODE = 110b or MODE Pin is 18 kΩ to DVDD)
- 8.3.1.1.8 Independent MOSFET Drive Mode (PWM_MODE = 111b or MODE Pin = 0.47 kΩ to DVDD)
- 8.3.1.2 Device Interface Modes
- 8.3.1.3 Gate Driver Voltage Supplies
- 8.3.1.4 Smart Gate Drive Architecture
- 8.3.1.1
PWM Control Modes
- 8.3.2 DVDD Linear Voltage Regulator
- 8.3.3 Pin Diagrams
- 8.3.4 Low-Side Current Sense Amplifiers
- 8.3.5
Gate Driver Protective Circuits
- 8.3.5.1 VM Supply Undervoltage Lockout (UVLO)
- 8.3.5.2 VCP Charge Pump Undervoltage Lockout (CPUV)
- 8.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
- 8.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
- 8.3.5.5 Gate Driver Fault (GDF)
- 8.3.5.6 Thermal Warning (OTW)
- 8.3.5.7 Thermal Shutdown (OTSD)
- 8.3.5.8 Open Load Detection (OLD)
- 8.3.5.9 Offline Shorts Diagnostics
- 8.3.5.10 Reverse Supply Protection
- 8.3.1
Three Phase Smart Gate Drivers
- 8.4 Device Functional Modes
- 8.5 Programming
- 8.6
Register Maps
- 8.6.1 Status Registers
- 8.6.2
Control Registers
- 8.6.2.1 IC1 Control Register (Address = 0x04) [reset = 0x00]
- 8.6.2.2 IC2 Control Register (address = 0x05) [reset = 0x40]
- 8.6.2.3 IC3 Control Register (Address = 0x06) [reset = 0xFF]
- 8.6.2.4 IC4 Control Register (Address = 0x07) [reset = 0xFF]
- 8.6.2.5 IC5 Control Register (Address = 0x08) [reset = 0xFF]
- 8.6.2.6 IC6 Control Register (Address = 0x09) [reset = 0x99]
- 8.6.2.7 IC7 Control Register (Address = 0x0A) [reset = 0x99]
- 8.6.2.8 IC8 Control Register (Address = 0x0B) [reset = 0x99]
- 8.6.2.9 IC9 Control Register (Address = 0x0C) [reset = 0x2F]
- 8.6.2.10 IC10 Control Register (Address = 0x0D) [reset = 0x61]
- 8.6.2.11 IC11 Control Register (Address = 0x0E) [reset = 0x00]
- 8.6.2.12 IC12 Control Register (Address = 0x0F) [reset = 0x2A]
- 8.6.2.13 IC13 Control Register (Address = 0x10) [reset = 0x7F]
- 8.6.2.14 IC14 Control Register (Address = 0x10) [reset = 0x00]
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機(jī)械、封裝和可訂購(gòu)信息
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- PHP|48
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- PHP|48
訂購(gòu)信息
9.2.1.2.3.1 Example
The goal of this example is to set the VDS monitor to trip at a current greater than 100 A. According to the CSD18536KCS 60 V N-Channel NexFET™ Power MOSFET data sheet, the RDS(on) value is 1.8 times higher at 175°C, and the maximum RDS(on) value at a VGS of 10 V is 1.6 mΩ. From these values, the approximate worst-case value of RDS(on) is 1.8 × 1.6 mΩ = 2.88 mΩ.
Using Equation 11 with a value of 2.88 mΩ for RDS(on) and a worst-case motor current of 100 A, Equation 12 shows the calculated the value of the VDS monitors.
For this example, the value of VDS_OCP was selected as 0.31 V.
The SPI devices allow for adjustment of the deglitch time for the VDS overcurrent monitor. The deglitch time can be set to 2 µs, 4 µs, 6 µs, 8 µs, 10 µs, 12 µs, 16 µs, or 20 µs.