ZHCSJ76A March 2018 – April 2019 DRV8343-Q1
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1
Three Phase Smart Gate Drivers
- 8.3.1.1
PWM Control Modes
- 8.3.1.1.1 6x PWM Mode (PWM_MODE = 000b or MODE Pin Tied to AGND)
- 8.3.1.1.2 3x PWM Mode (PWM_MODE = 001b or MODE Pin = 18 kΩ to AGND)
- 8.3.1.1.3 1x PWM Mode (PWM_MODE = 010b or MODE Pin = 75 kΩ to AGND)
- 8.3.1.1.4 Independent Half-Bridge PWM Mode (PWM_MODE = 011b or MODE Pin is > 1.5 MΩ to AGND or Hi-Z)
- 8.3.1.1.5 Phases A and B are Independent Half-Bridges, Phase C is Independent FET (MODE = 100b)
- 8.3.1.1.6 Phases B and C are Independent Half-Bridges, Phase A is Independent FET (MODE = 101b or MODE Pin is 75 kΩ to DVDD)
- 8.3.1.1.7 Phases A is Independent Half-Bridge, Phases B and C are Independent FET (MODE = 110b or MODE Pin is 18 kΩ to DVDD)
- 8.3.1.1.8 Independent MOSFET Drive Mode (PWM_MODE = 111b or MODE Pin = 0.47 kΩ to DVDD)
- 8.3.1.2 Device Interface Modes
- 8.3.1.3 Gate Driver Voltage Supplies
- 8.3.1.4 Smart Gate Drive Architecture
- 8.3.1.1
PWM Control Modes
- 8.3.2 DVDD Linear Voltage Regulator
- 8.3.3 Pin Diagrams
- 8.3.4 Low-Side Current Sense Amplifiers
- 8.3.5
Gate Driver Protective Circuits
- 8.3.5.1 VM Supply Undervoltage Lockout (UVLO)
- 8.3.5.2 VCP Charge Pump Undervoltage Lockout (CPUV)
- 8.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
- 8.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
- 8.3.5.5 Gate Driver Fault (GDF)
- 8.3.5.6 Thermal Warning (OTW)
- 8.3.5.7 Thermal Shutdown (OTSD)
- 8.3.5.8 Open Load Detection (OLD)
- 8.3.5.9 Offline Shorts Diagnostics
- 8.3.5.10 Reverse Supply Protection
- 8.3.1
Three Phase Smart Gate Drivers
- 8.4 Device Functional Modes
- 8.5 Programming
- 8.6
Register Maps
- 8.6.1 Status Registers
- 8.6.2
Control Registers
- 8.6.2.1 IC1 Control Register (Address = 0x04) [reset = 0x00]
- 8.6.2.2 IC2 Control Register (address = 0x05) [reset = 0x40]
- 8.6.2.3 IC3 Control Register (Address = 0x06) [reset = 0xFF]
- 8.6.2.4 IC4 Control Register (Address = 0x07) [reset = 0xFF]
- 8.6.2.5 IC5 Control Register (Address = 0x08) [reset = 0xFF]
- 8.6.2.6 IC6 Control Register (Address = 0x09) [reset = 0x99]
- 8.6.2.7 IC7 Control Register (Address = 0x0A) [reset = 0x99]
- 8.6.2.8 IC8 Control Register (Address = 0x0B) [reset = 0x99]
- 8.6.2.9 IC9 Control Register (Address = 0x0C) [reset = 0x2F]
- 8.6.2.10 IC10 Control Register (Address = 0x0D) [reset = 0x61]
- 8.6.2.11 IC11 Control Register (Address = 0x0E) [reset = 0x00]
- 8.6.2.12 IC12 Control Register (Address = 0x0F) [reset = 0x2A]
- 8.6.2.13 IC13 Control Register (Address = 0x10) [reset = 0x7F]
- 8.6.2.14 IC14 Control Register (Address = 0x10) [reset = 0x00]
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
封裝選項
機械數(shù)據(jù) (封裝 | 引腳)
- PHP|48
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
- PHP|48
訂購信息
9.2.1.2.2.1 Example
Use Equation 10 to calculate the value of IDRIVEP for a gate-to-drain charge of 14 nC and a rise time from 100 to 300 ns.
Equation 10. 
Select an IDRIVEP value that is close to 14 mA which will set the IDRIVEN value close to 28 mA. For this example, the value of IDRIVEP was selected as 15 mA.