ZHCSJU7 May 2019 DRV8340-Q1
PRODUCTION DATA.
The DRV8340-Q1 device integrates three, half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. A doubler charge pump provides the correct gate bias voltage to the high-side MOSFET across a wide operating voltage range in addition to providing 100% support of the duty cycle. An internal linear regulator provides the gate bias voltage for the low-side MOSFETs. The half-bridge gate drivers can be used in combination to drive a three-phase motor or separately to drive other types of loads.
The DRV8340-Q1 device implements a Smart Gate Drive architecture which allows the user to dynamically adjust the gate drive current without requiring external resistors to limit the gate current. Additionally, this architecture provides a variety of protection features for the external MOSFETs including automatic dead time insertion, prevent of parasitic dV/dt gate turnon, and gate fault detection.