SLUAB11 November 2025 AMC23C12-Q1 , TMCS1126-Q1 , UCC21750-Q1
This technical white paper delivers a comprehensive analysis of three protection methods: Shunt-based detection, desaturation method and hall-effect-based detection for addressing short circuit scenarios in high voltage SiC MOSFETs. The shunt-based method offers the fastest response and lowest cost for low-inductance circuits. The desaturation detection is comparatively costly and slower response time of the examined methods but has lower overshoot as advantage. Hall sensors, while a cost-effective option, comes with a extra effort to manage high diSC/dt scenarios. Balancing of different factors like PCB layout optimization, component selection, and application-specific requirements are key to enhance SiC MOSFET reliability in HEV/EV systems.
The work for this paper has been carried out in close cooperation with Vinay Kumar Krishnappa, Christoph Ludecke and Jan Riedel in Flex Automotive, and testing results in this paper was first published at PCIM 2025 [20].