H.
Wouters and W. Martinez, “Bidirectional onboard
chargers for electric vehicles: State-of-the-art
and future trends,” IEEE Transactions on Power
Electronics, vol. 39, no. 1, pp. 693–716, Jan.
2024. DOI: 10.1109/tpel.2023.3319996.
B. Shi,
A. I. Ramones, Y. Liu, H. Wang, Y. Li, et al., “A
review of silicon carbide MOSFETs in electrified
vehicles: Application, challenges, and future
development,” IET Power Electronics, vol. 16, no.
12, pp. 2103–2120, May 2023. DOI: 10.1049/pel2.
12524.
E.
Chemali, M. Preindl, P. Malysz, and A. Emadi,
“Electrochemical and electrostatic energy storage
and management systems for electric drive
vehicles: State-of-the-art review and future
trends,” IEEE Journal of Emerging and Selected
Topics in Power Electronics, vol. 4, no. 3, pp.
1117–1134, 2016. DOI:
10.1109/jestpe.2016.2566583.
J.
Serrano, “Imagining the future of the internal
combustion engine for ground transport in the
current context,” Applied Sciences, vol. 7, no.
10, p. 1001, Sep. 2017. DOI:
10.3390/app7101001.
S. Dutta
and J. Bauman, “An overview of 800 V passenger
electric vehicle onboard chargers: Challenges,
topologies, and control,” IEEE Access, vol. 12,
pp. 105 850–105 864, 2024. DOI:
10.1109/access.2024.3435463.
M. Zhang,
H. Li, Z. Yang, S. Zhao, X. Wang, and L. Ding,
“Analysis of SiC MOSFETs short-circuit behavior in
half bridge configuration during shoot through
event,” in 2023 IEEE Energy Conversion Congress
and Exposition (ECCE), IEEE, Oct. 2023, pp.
5350–5358. DOI: 10.1109/ecce53617.
2023.10362468.
H. Qin,
H. Hu, W. Huang, Y. Mo, and W. Chen, “An improved
desaturation short-circuit protection method for
SiC power modules,” Energy Reports, vol. 8, pp.
1383–1390, Apr. 2022. DOI: 10.1016/j.
egyr.2021.11.274.
M. Zhang,
H. Li, Z. Yang, S. Zhao, X. Wang, and L. Ding,
“Short circuit protection of silicon carbide
MOSFETs: Challenges, methods, and prospects,” IEEE
Transactions on Power Electronics, vol. 39, no.
10, pp. 13 081–13 095, Oct. 2024. DOI: 10.
1109/tpel.2024.3430897.
M. Cui,
J. Li, Y. Du, and Z. Zhao, “Behavior of SiC MOSFET
under short-circuit during the on-state,” IOP
Conference Series: Materials Science and
Engineering, vol. 439, p. 022 026, Nov. 2018. DOI:
10.1088/1757-899x/439/2/022026.
J. Lutz
and T. Basler, “Short-circuit ruggedness of
high-voltage IGBTs,” in 2012 28th International
Conference on Microelectronics Proceedings, IEEE,
May 2012, pp. 243–250. DOI: 10.
1109/miel.2012.6222845.
Z. Wang,
X. Shi, Y. Xue, L. M. Tolbert, F. Wang, and B. J.
Blalock, “Design and performance evaluation of
overcurrent protection schemes for silicon carbide
(sic) power mosfets,” IEEE Transactions on
Industrial Electronics, vol. 61, no. 10, pp. 5570–
5581, Oct. 2014. DOI:
10.1109/tie.2013.2297304.
J.-A.
Lee, D. H. Sim, and B. K. Lee, “Short-circuit
protection for SiC MOSFET based on PCB-type
rogowski current sensor: Design guidelines,
practical solutions, and performance validation,”
IEEE Transactions on Power Electronics, vol. 39,
no. 3, pp. 3580–3589, Mar. 2024. DOI:
10.1109/tpel. 2023.3339724.
C. Xiao,
L. Zhao, T. Asada, W. Odendaal, and J. van Wyk,
“An overview of integratable current sensor
technologies,” in 38th IAS Annual Meeting on
Conference Record of the Industry Applications
Conference, 2003., ser. IAS-03, vol. 2, IEEE,
2003, pp. 1251–1258. DOI: 10.1109/ias.2003.
1257710.
M.
Laumen, C. L¨udecke, and R. W. De Doncker,
“Ultra-fast short-circuit detection for SiC
MOSFETs using dc-link voltage monitoring,” in 2020
IEEE 11th International Symposium on Power
Electronics for Distributed Generation Systems
(PEDG), IEEE, Sep. 2020, pp. 547–553. DOI:
10.1109/pedg48541.2020.9244367.
D. Xing,
B. Hu, M. Kang, Y. Zhang, S. Nayak, et al.,
“1200-v sic mosfet short-circuit ruggedness
evaluation and methods to improve withstand time,”
IEEE Journal of Emerging and Selected Topics in
Power Electronics, vol. 10, no. 5, pp. 5059–5069,
Oct. 2022. DOI: 10.1109/jestpe.2022.3144995.
B.
Kakarla, T. Ziemann, R. Stark, P. Natzke, and U.
Grossner, “Short circuit ruggedness of new
generation 1.2 kv sic mosfets,” in 2018 IEEE 6th
Workshop on Wide Bandgap Power Devices and
Applications (WiPDA), IEEE, Oct. 2018, pp. 118–
124. DOI: 10.1109/wipda.2018.8569077.
J.
Ferreira,W. Cronje, andW. Relihan, “Integration of
high frequency current shunts in power electronic
circuits,” in PESC ‘92 Record. 23rd Annual IEEE
Power Electronics Specialists Conference, IEEE,
1992, pp. 1284–1290. DOI: 10.1109/pesc.
1992.254728.
M.
Crescentini, S. F. Syeda, and G. P. Gibiino,
“Hall-effect current sensors: Principles of
operation and implementation techniques,” IEEE
Sensors Journal, vol. 22, no. 11, pp. 10 137–10
151, Jun. 2022. DOI:
10.1109/jsen.2021.3119766.
N. Fritz,
G. Engelmann, A. Stippich, C. L¨udecke, D. A.
Philipps, and R. W. De Doncker, “Toward an
in-depth understanding of the commutation
processes in a SiC MOSFET switching cell including
parasitic elements,” IEEE Transactions on Industry
Applications, vol. 56, no. 4, pp. 4089–4101, Jul.
2020. DOI: 10.1109/tia.2020.2995331.
V. K.
Krishnappa, C. Luedecke, J. Riedel and J. Fu,
"Comparison of Short-Circuit Detection and
Protection Methods for Silicon Carbide MOSFETs in
EV Applications," PCIM Conference 2025;
International Exhibition and Conference for Power
Electronics, Intelligent Motion, Renewable Energy
and Energy Management, Nürnberg, Germany, 2025,
pp. 1085-1092, doi: 10.30420/566541141.