SLUAB11 November 2025 AMC23C12-Q1 , TMCS1126-Q1 , UCC21750-Q1
Due to the increasing demand for battery electric vehicles (BEVs), high-voltage DC/DC converters and on-board chargers (OBCs) are gaining increased importance[1–4]. Lately, 800V BEVs are rapidly entering the market which allows for fast charging [5]. Silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) have several advantages over silicon (Si) insulated gate bipolar transistors (IGBTs). The most important advantages include higher thermal conductivity, faster switching speed, higher junction temperature and higher blocking voltage [6]. Therefore, utilization of SiC MOSFET in automotive systems is growing rapidly.
However, the use of SiC MOSFET poses new challenges. The differences between SiC MOSFET and IGBT in dealing with short-circuit scenarios are mainly reflected in the following two aspects. [7]
These characteristics lead to the fact that SiC MOSFETs in HV DC/DC converters and OBCs need faster and reliable short-circuit protection measures to meet the high safety standards in automotive. The challenges particularly lie in the speed of detection and disconnection of the short-circuit event to prevent damage of the system [8]. The system short circuit protection (SCP) response time is defined to verify reliable short circuit protection.