SLUAB11 November 2025 AMC23C12-Q1 , TMCS1126-Q1 , UCC21750-Q1
For the hall-effect-based measurements, the turn-on gate resistance RG,on needs to be modified to detect the short-circuit event. In the meantime, the slew rate of the current can be decreased by increasing turn-on resistance RG,on.
Therefore, in these measurements, the resistance RG,on is increased from 15Ω to 25Ω. In Figure 5-5, the measurement results using the hall-sensor-based short-circuit detection is shown. At time 0ns, the gate-source voltage uGS reaches the threshold voltage of the SiC MOSFET and the current iSC starts to rise. The fault signal uhall decreases rapidly at time 700ns, disabling the gate driver. At time 830ns, the gate-source voltage uGS starts to decrease, turning off the MOSFET SHS safely. The overshoot in the drain-source voltage uDS reaches 1090V at the maximum.
Figure 5-5 Waveforms for Hall-Based
Method With RG,off = 35Ω