For the hall-effect-based measurements, the turn-on gate resistance R_G,on needs to be modified to detect the short-circuit event. In the meantime, the slew rate of the current can be decreased by increasing turn-on resistance R_G,on.

Therefore, in these measurements, the resistance R_G,on is increased from 15Ω to 25Ω. In Figure 5-5, the measurement results using the hall-sensor-based short-circuit detection is shown. At time 0ns, the gate-source voltage u_GS reaches the threshold voltage of the SiC MOSFET and the current i_SC starts to rise. The fault signal u_hall decreases rapidly at time 700ns, disabling the gate driver. At time 830ns, the gate-source voltage u_GS starts to decrease, turning off the MOSFET S_HS safely. The overshoot in the drain-source voltage u_DS reaches 1090V at the maximum.