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ZHCSP56 September 2023 TPS1HTC30-Q1

PRODUCTION DATA

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

PWP|14
- MPDS370A

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

PWP|14
- PPTD381

訂購信息

zhcsp56_oa

6.5 Electrical Characteristics

V_S = 6 V to 60 V, T_A = -40°C to 125°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
VS SUPPLY VOLTAGE AND CURRENT
IL_NOM	Continuous load current	V_EN = HI, T_AMB = 85°C			6		A
I_{Q, VS}	V_S quiescent current	V_EN = HI, I_OUT = 0A	V_{DIAG_EN} = LO		1	1.5	mA
I_{Q, VS}	V_S quiescent current	V_EN = HI, I_OUT = 0A	V_{DIAG_EN} = HI		1.1	1.9	mA
I_{STBY, VS}	Total device standby current (including MOSFET) with diagnostics disabled	VS ≤ 60 V, V_EN = V_{DIAG_EN} = LO, V_OUT = 0 V	T_J = 85°C		0.25	0.7	μA
I_{STBY, VS}		VS ≤ 60 V, V_EN = V_{DIAG_EN} = LO, V_OUT = 0 V	T_J = 150°C		0.63	6	μA
I_OUT(OFF)	Output leakage current	VS ≤ 60 V, V_EN = V_{DIAG_EN} = 0 V, V_OUT = 0 V	T_J = 85°C			0.4	μA
I_OUT(OFF)	Output leakage current	VS ≤ 60 V, V_EN = V_{DIAG_EN} = 0 V, V_OUT = 0 V	T_J = 150°C		0.2	12	μA
t_STBY	Standby mode delay time	V_EN = V_{DIAG_EN} = 0 V to standby			20		ms
VS UNDERVOLTAGE LOCKOUT (UVLO) INPUT
V_S,UVLOR	V_S undervoltage lockout rising	Measured with respect to the GND pin of the device		5.0	5.4	5.75	V
V_S,UVLOF	V_S undervoltage lockout falling	Measured with respect to the GND pin of the device		4.1	4.5	4.85	V
VS OVERVOLTAGE LOCKOUT (OVLO) INPUT
V_S,OVPR	V_S overvoltage protection rising	Measured with respect to the GND pin of the device, VEN = HI	Measured with respect to the GND pin of the device	62	65	68	V
V_S,OVPRF	V_S overvoltage protection recovery falling	Measured with respect to the GND pin of the device, VEN = HI	Measured with respect to the GND pin of the device	60	63	66	V
V_S,OVPRH	V_S overvoltage protection threshold hysteresis	Measured with respect to the GND pin of the device	Measured with respect to the GND pin of the device		2		V
t_VS,OVP	V_S overvoltage protection deglitch time	Time from triggering the OVP fault to FET turn-off			125		μs
VDS CLAMP
V_DS,Clamp	V_DS clamp voltage	FET current = 10 mA	V_S = 24 V	65	72.5	80	V
V_DS,Clamp	V_DS clamp voltage	FET current = 10 mA	V_S = 6 V	48	53	58	V
RON CHARACTERISTICS
R_ON	On-resistance (Includes MOSFET and package)	V_S = 6 V to 60 V, 0.5 A ≤ I_OUT≤ 6 A	T_J = 25°C		30		mΩ
			T_J = 125°C			50	mΩ
			T_J = 150°C			60	mΩ
R_ON(REV)	On-resistance during reverse polarity	V_S = –24 V, I_OUT= 2 A	T_J = -40°C to 150°C		30	60	mΩ
CURRENT LIMIT CHARACTERISTICS
I_{LIM_INT}	I_LIMCurrent Limitation level internal reference	R_ILIM = Open or Out of range			8		A
I_{LIM_INT}	I_LIMCurrent Limitation level internal reference	R_ILIM = GND			16		A
K_CL	Current Limit Ratio		R_ILIM = 10 k? to 50 k?	80	100	120	A * kΩ
THERMAL SHUTDOWN CHARACTERISTICS
T_ABS	Thermal shutdown			154	165		°C
T_REL	Relative thermal shutdown				60		°C
t_RETRY	Retry time	Time from fault shutdown until switch re-enable (thermal shutdown).			2		ms
Fault Response	Fault reponse to Thermal Shutdown				Configurable via Latch pin
T_HYS	Thermal shutdown hysteresis				20		°C
FAULT PIN CHARACTERISTICS
V_FAULT	FAULT low output voltage	I_FAULT = 2.5 mA				0.5	V
t_{FAULT_FLT}	Fault indication-time	V_{DIAG_EN} = 5 V Time between fault and FAULT asserting				60	μs
t_{FAULT_SNS}	Fault indication-time	V_{DIAG_EN} = 5 V Time between fault and I_SNS settling at V_SNSFH				60	μs
CURRENT SENSE CHARACTERISTICS
K_SNS1	Current sense ratio I_OUT / I_SNS				1300		A/A
I_SNSI	Current sense current and accuracy	V_EN = V_{DIAG_EN} = 5 V	I_OUT = 6 A		4.61		mA
			I_OUT = 6 A	–6		6	%
			I_OUT = 4 A		3.3		mA
			I_OUT = 4 A	–3		3	%
			I_OUT = 2 A		1.66		mA
			I_OUT = 2 A	–4		4	%
			I_OUT = 1 A		0.833		mA
			I_OUT = 1 A	–4		4	%
			I_OUT = 500 mA		0.417		mA
			I_OUT = 500 mA	–6		6	%
			I_OUT = 200 mA		0.15		mA
			I_OUT = 200 mA	–10		10	%
			I_OUT = 100 mA		0.073		mA
			I_OUT = 100 mA	–15		15	%
			I_OUT = 50 mA		0.035		mA
			I_OUT = 50 mA	–25		25	%
			I_OUT = 20 mA		0.012		mA
			I_OUT = 20 mA	–40		40	%
			I_OUT = 10 mA		0.0088		mA
			I_OUT = 10 mA	–60		60	%
SNS PIN CHARACTERISTICS
V_SNSFH	V_SNSfault high-level	V_{DIAG_EN} = 5 V		4.5	5	5.77	V
V_SNSFH	V_SNSfault high-level	V_{DIAG_EN} = V_IH to 3.3 V		3.0	3.3	3.82	V
I_SNSFLT	I_SNSfault high-level	V_{DIAG_EN} > V_{IH,DIAG_EN}		5.3	6.4		mA
I_SNSleak	I_SNS leakage	V_{DIAG_EN} = 5 V, IL = 0 mA				1.3	μA
V_{S_ISNS}	V_S headroom needed for full current sense and fault functionality	V_{DIAG_EN} = 3.3 V		6			V
V_{S_ISNS}		V_{DIAG_EN} = 5 V		6.5			V
OPEN LOAD DETECTION CHARACTERISTICS
V_{OL_OFF}	OFF state open-load (OL) detection voltage	V_EN = 0 V, V_{DIAG_EN} = 5 V		1.5	2	2.5	V
R_{OL_OFF}	OFF state open-load (OL) detection internal pull-up resistor	V_EN = 0 V, V_{DIAG_EN} = 5 V		120	150	180	kΩ
t_{OL_OFF}	OFF state open-load (OL) detection deglitch time	V_EN = 0 V, V_{DIAG_EN} = 5 V, When Vs – V_OUT < V_OL, duration longer than t_OL. Openload detected.			480	700	μs
t_{OL_OFF_1}	OL_OFF and STB indication-time from EN falling	V_EN= 5 V to 0 V, V_{DIAG_EN} = 5 V I_OUT = 0 mA, V_OUT = Vs - V_OL			310	700	μs
t_{OL_OFF_2}	OL and STB indication-time from DIA_EN rising	V_EN = 0 V, V_{DIAG_EN} = 0 V to 5 V I_OUT= 0 mA, V_OUT = V_S - V_OL				700	μs
DIAG_EN PIN CHARACTERISTICS
V_{IL, DIAG_EN}	Input voltage low-level	No GND Network				0.8	V
V_{IH, DIAG_EN}	Input voltage high-level	No GND Network		1.5			V
V_{IHYS, DIAG_EN}	Input voltage hysteresis				280		mV
R_{DIAG_EN}	Internal pulldown resistor			200	350	500	kΩ
I_{IL, DIAG_EN}	Input current low-level	V_{DIAG_EN} = 0.8 V			2.2		μA
I_{IH, DIAG_EN}	Input current high-level	V_{DIAG_EN} = 5 V			14		μA
EN PIN CHARACTERISTICS
V_{IL, EN}	Input voltage low-level	No GND Network				0.8	V
V_{IH, EN}	Input voltage high-level	No GND Network		1.5			V
V_{IH, EN}	Input voltage hysteresis				280		mV
R_EN	Internal pulldown resistor			200	350	500	kΩ
I_{IL, EN}	Input current low-level	V_EN = 0.8 V			2.2		μA
I_{IH, EN}	Input current high-level	V_EN = 5 V			14		μA
LATCH PIN CHARACTERISTICS
V_{IL, LATCH}	Input voltage low-level	No GND Network				0.8	V
V_{IH, LATCH}	Input voltage high-level	No GND Network		1.5			V
V_{IHYS, LATCH}	Input voltage hysteresis				280		mV
R_LATCH	Internal pulldown resistor			0.7	1	1.4	MΩ
I_{IL, LATCH}	Input current low-level	V_{DIA_EN} = 0.8 V			2.2		μA
I_{IH, LATCH}	Input current high-level	V_{DIA_EN} = 5 V			14		μA