ZHCSP56 September 2023 TPS1HTC30-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VS SUPPLY VOLTAGE AND CURRENT | |||||||
| ILNOM | Continuous load current | VEN = HI, TAMB = 85°C | 6 | A | |||
| IQ, VS | VS quiescent current | VEN = HI, IOUT = 0A | VDIAG_EN = LO | 1 | 1.5 | mA | |
| VDIAG_EN = HI | 1.1 | 1.9 | mA | ||||
| ISTBY, VS | Total device standby current (including MOSFET) with diagnostics disabled | VS ≤ 60 V, VEN = VDIAG_EN = LO, VOUT = 0 V | TJ = 85°C | 0.25 | 0.7 | μA | |
| TJ = 150°C | 0.63 | 6 | μA | ||||
| IOUT(OFF) | Output leakage current | VS ≤ 60 V, VEN = VDIAG_EN = 0 V, VOUT = 0 V | TJ = 85°C | 0.4 | μA | ||
| TJ = 150°C | 0.2 | 12 | μA | ||||
| tSTBY | Standby mode delay time | VEN = VDIAG_EN = 0 V to standby | 20 | ms | |||
| VS UNDERVOLTAGE LOCKOUT (UVLO) INPUT | |||||||
| VS,UVLOR | VS undervoltage lockout rising | Measured with respect to the GND pin of the device | 5.0 | 5.4 | 5.75 | V | |
| VS,UVLOF | VS undervoltage lockout falling | 4.1 | 4.5 | 4.85 | V | ||
| VS OVERVOLTAGE LOCKOUT (OVLO) INPUT | |||||||
| VS,OVPR | VS overvoltage protection rising | Measured with respect to the GND pin of the device, VEN = HI | Measured with respect to the GND pin of the device | 62 | 65 | 68 | V |
| VS,OVPRF | VS overvoltage protection recovery falling | Measured with respect to the GND pin of the device, VEN = HI | Measured with respect to the GND pin of the device | 60 | 63 | 66 | V |
| VS,OVPRH | VS overvoltage protection threshold hysteresis | Measured with respect to the GND pin of the device | Measured with respect to the GND pin of the device | 2 | V | ||
| tVS,OVP | VS overvoltage protection deglitch time | Time from triggering the OVP fault to FET turn-off | 125 | μs | |||
| VDS CLAMP | |||||||
| VDS,Clamp | VDS clamp voltage | FET current = 10 mA | VS = 24 V | 65 | 72.5 | 80 | V |
| VS = 6 V | 48 | 53 | 58 | V | |||
| RON CHARACTERISTICS | |||||||
| RON | On-resistance (Includes MOSFET and package) |
VS = 6 V to 60 V, 0.5 A ≤ IOUT ≤ 6 A | TJ = 25°C | 30 | mΩ | ||
| TJ = 125°C | 50 | mΩ | |||||
| TJ = 150°C | 60 | mΩ | |||||
| RON(REV) | On-resistance during reverse polarity | VS = –24 V, IOUT = 2 A | TJ = -40°C to 150°C | 30 | 60 | mΩ | |
| CURRENT LIMIT CHARACTERISTICS | |||||||
| ILIM_INT | ILIM Current Limitation level internal reference | RILIM = Open or Out of range | 8 | A | |||
| RILIM = GND | 16 | A | |||||
| KCL | Current Limit Ratio | RILIM = 10 k? to 50 k? | 80 | 100 | 120 | A * kΩ | |
| THERMAL SHUTDOWN CHARACTERISTICS | |||||||
| TABS | Thermal shutdown | 154 | 165 | °C | |||
| TREL | Relative thermal shutdown | 60 | °C | ||||
| tRETRY | Retry time | Time from fault shutdown until switch re-enable (thermal shutdown). | 2 | ms | |||
| Fault Response | Fault reponse to Thermal Shutdown | Configurable via Latch pin | |||||
| THYS | Thermal shutdown hysteresis | 20 | °C | ||||
| FAULT PIN CHARACTERISTICS | |||||||
| VFAULT | FAULT low output voltage | IFAULT = 2.5 mA | 0.5 | V | |||
| tFAULT_FLT | Fault indication-time | VDIAG_EN = 5 V Time between fault and FAULT asserting |
60 | μs | |||
| tFAULT_SNS | Fault indication-time | VDIAG_EN = 5 V Time between fault and ISNS settling at VSNSFH |
60 | μs | |||
| CURRENT SENSE CHARACTERISTICS | |||||||
| KSNS1 | Current sense ratio IOUT / ISNS |
1300 | A/A | ||||
| ISNSI | Current sense current and accuracy | VEN = VDIAG_EN = 5 V | IOUT = 6 A | 4.61 | mA | ||
| –6 | 6 | % | |||||
| IOUT = 4 A | 3.3 | mA | |||||
| –3 | 3 | % | |||||
| IOUT = 2 A | 1.66 | mA | |||||
| –4 | 4 | % | |||||
| IOUT = 1 A | 0.833 | mA | |||||
| –4 | 4 | % | |||||
| IOUT = 500 mA | 0.417 | mA | |||||
| –6 | 6 | % | |||||
| IOUT = 200 mA | 0.15 | mA | |||||
| –10 | 10 | % | |||||
| IOUT = 100 mA | 0.073 | mA | |||||
| –15 | 15 | % | |||||
| IOUT = 50 mA | 0.035 | mA | |||||
| –25 | 25 | % | |||||
| IOUT = 20 mA | 0.012 | mA | |||||
| –40 | 40 | % | |||||
| IOUT = 10 mA | 0.0088 | mA | |||||
| –60 | 60 | % | |||||
| SNS PIN CHARACTERISTICS | |||||||
| VSNSFH | VSNS fault high-level | VDIAG_EN = 5 V | 4.5 | 5 | 5.77 | V | |
| VSNSFH | VSNS fault high-level | VDIAG_EN = VIH to 3.3 V | 3.0 | 3.3 | 3.82 | V | |
| ISNSFLT | ISNS fault high-level | VDIAG_EN > VIH,DIAG_EN | 5.3 | 6.4 | mA | ||
| ISNSleak | ISNS leakage | VDIAG_EN = 5 V, IL = 0 mA | 1.3 | μA | |||
| VS_ISNS | VS headroom needed for full current sense and fault functionality | VDIAG_EN = 3.3 V | 6 | V | |||
| VDIAG_EN = 5 V | 6.5 | V | |||||
| OPEN LOAD DETECTION CHARACTERISTICS | |||||||
| VOL_OFF | OFF state open-load (OL) detection voltage | VEN = 0 V, VDIAG_EN = 5 V | 1.5 | 2 | 2.5 | V | |
| ROL_OFF | OFF state open-load (OL) detection internal pull-up resistor | VEN = 0 V, VDIAG_EN = 5 V | 120 | 150 | 180 | kΩ | |
| tOL_OFF | OFF state open-load (OL) detection deglitch time | VEN = 0 V, VDIAG_EN = 5 V, When Vs – VOUT < VOL, duration longer than tOL. Openload detected. | 480 | 700 | μs | ||
| tOL_OFF_1 | OL_OFF and STB indication-time from EN falling | VEN = 5 V to 0 V, VDIAG_EN = 5 V IOUT = 0 mA, VOUT = Vs - VOL |
310 | 700 | μs | ||
| tOL_OFF_2 | OL and STB indication-time from DIA_EN rising | VEN = 0 V, VDIAG_EN = 0 V to 5 V IOUT = 0 mA, VOUT = VS - VOL |
700 | μs | |||
| DIAG_EN PIN CHARACTERISTICS | |||||||
| VIL, DIAG_EN | Input voltage low-level | No GND Network | 0.8 | V | |||
| VIH, DIAG_EN | Input voltage high-level | No GND Network | 1.5 | V | |||
| VIHYS, DIAG_EN | Input voltage hysteresis | 280 | mV | ||||
| RDIAG_EN | Internal pulldown resistor | 200 | 350 | 500 | kΩ | ||
| IIL, DIAG_EN | Input current low-level | VDIAG_EN = 0.8 V | 2.2 | μA | |||
| IIH, DIAG_EN | Input current high-level | VDIAG_EN = 5 V | 14 | μA | |||
| EN PIN CHARACTERISTICS | |||||||
| VIL, EN | Input voltage low-level | No GND Network | 0.8 | V | |||
| VIH, EN | Input voltage high-level | No GND Network | 1.5 | V | |||
| VIH, EN | Input voltage hysteresis | 280 | mV | ||||
| REN | Internal pulldown resistor | 200 | 350 | 500 | kΩ | ||
| IIL, EN | Input current low-level | VEN = 0.8 V | 2.2 | μA | |||
| IIH, EN | Input current high-level | VEN = 5 V | 14 | μA | |||
| LATCH PIN CHARACTERISTICS | |||||||
| VIL, LATCH | Input voltage low-level | No GND Network | 0.8 | V | |||
| VIH, LATCH | Input voltage high-level | No GND Network | 1.5 | V | |||
| VIHYS, LATCH | Input voltage hysteresis | 280 | mV | ||||
| RLATCH | Internal pulldown resistor | 0.7 | 1 | 1.4 | MΩ | ||
| IIL, LATCH | Input current low-level | VDIA_EN = 0.8 V | 2.2 | μA | |||
| IIH, LATCH | Input current high-level | VDIA_EN = 5 V | 14 | μA | |||