ZHCSDD8D October 2014 – December 2019 TPS1H100-Q1
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Accurate Current Sense
- 7.3.2 Programmable Current Limit
- 7.3.3 Inductive-Load Switching-Off Clamp
- 7.3.4
Full Protections and Diagnostics
- 7.3.4.1 Short-to-GND and Overload Detection
- 7.3.4.2 Open-Load Detection
- 7.3.4.3 Short-to-Battery Detection
- 7.3.4.4 Reverse-Polarity Detection
- 7.3.4.5 Thermal Protection Behavior
- 7.3.4.6 UVLO Protection
- 7.3.4.7 Loss of GND Protection
- 7.3.4.8 Loss of Power Supply Protection
- 7.3.4.9 Reverse Current Protection
- 7.3.4.10 Protection for MCU I/Os
- 7.3.5 Diagnostic Enable Function
- 7.4 Device Functional Modes
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機械、封裝和可訂購信息
封裝選項
機械數(shù)據(jù) (封裝 | 引腳)
- PWP|14
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
- PWP|14
訂購信息
8.2.3 Application Curves
Figure 48 shows a test example of initial short-circuit inrush-current limit. Test conditions: VS = 13.5 V, input is from low to high, load is short-to-GND or with a 470-µF capacitive load, external current limit is 2 A. CH1 is the output current. CH3 is the input step.
Figure 49 shows a test example of a hard short-circuit inrush-current limit. Test conditions: VS= 13.5 V, input is high, load is 5 µH + 100 mΩ, external current limit is 1 A. A short to GND suddenly happens.
Figure 49. Hard Short-to-GND Waveform