ZHCSYB3J August 2006 – May 2025 TLE4275-Q1
PRODUCTION DATA
請參考 PDF 數據表獲取器件具體的封裝圖。
舊芯片:IOUT = 200mA、CIN = 22μF 且 COUT = 10μF;新芯片:在 TJ = –40°C 至 +150°C、VIN = 13.5V、IOUT = 100μA、COUT = 2.2μF、1mΩ < COUT ESR < 2Ω 且 CIN = 1μF 條件下指定(除非另有說明)

| 通道 1 = VOUT、通道 2 = VIN、通道 3 = VRESET |

| COUT = 10μF (X7R 50V)、VOUT = 5V |

| VIN = 13.5V,VOUT = 5V,IOUT = 150mA,COUT = 10μF |

| 通道 1 = VOUT、通道 2 = VIN、通道 3 = VRESET |

| VOUT = 5V,IOUT = 150mA 至 350mA,壓擺率 = 0.1A/μs, COUT = 10μF |