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ZHCSE15F July 2015 – May 2018 SN65DP159 , SN75DP159

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

RSB|40
- MPQF185C
RGZ|48
- MPQF123F

散熱焊盤機械數據 (封裝 | 引腳)

RSB|40
- QFND255H
RGZ|48
- QFND014T

訂購信息

7.5 Power Supply Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS		TYP⁽²⁾	MAX⁽¹⁾	UNIT
P_D1	Device power dissipation (Retimer operation)	OE = H, V_CC = 3.3 V/3.6 V, V_DD = 1.1 V/1.27 V IN_Dx: V_{ID_PP} = 1200 mV, 6Gbps TMDS pattern, V_I = 3.3 V, I2C_EN/PIN = L, PRE_SEL= H, EQ_CTL= H, SDA_CTL/CLK_CTL = 0 V, VSadj = 7.06 kΩ		435	600	mW
P_D2	Device power dissipation (Redriver operation)	OE = H, V_CC = 3.3 V/3.6 V, V_DD = 1.1 V/1.27 V IN_Dx: V_{ID_PP} = 1200 mV, 6Gbps TMDS pattern, V_I = 3.3 V, I2C_EN/PIN = L, PRE_SEL= H, EQ_CTL= H, SDA_CTL/CLK_CTL = 0 V, VSadj = 7.06 kΩ		215	400	mW
P_SD1	Device power in power down	OE = L, V_CC = 3.3 V/3.6 V, V_DD = 1.1 V/1.27 V, VSadj = 7.06 kΩ		10	30	mW
I_CC1	VCC supply current (TMDS 6Gpbs retimer mode)	OE = H, V_CC= 3.3 V/3.6 V, V_DD = 1.1V/1.27 V, VSadj = 7.06 kΩ IN_Dx: VID_PP = 1200 mV, 6Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = H, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H		35	50	mA
I_DD1	VDD supply current (TMDS 6Gpbs retimer mode)	OE = H, V_CC = 3.3 V/3.6 V, V_DD = 1.1 V/1.27 V, VSadj = 7.06 kΩ IN_Dx: V_{ID_PP} = 1200 mV, 6Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = H, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H		295	325	mA
I_CC2	VCC supply current (TMDS 6Gpbs redriver mode)	OE = H, V_CC = 3.3 V/3.465 V, V_DD = 1.1 V/1.27 V, VSadj = 7.06 kΩ IN_Dx: V_{ID_PP} = 1200 mV, 6Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = H, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H		8	20	mA
I_DD2	VDD supply current (TMDS 6Gpbs redriver mode)	OE = H, V_CC = 3.3 V/3.465 V, V_DD = 1.1 V/1.27 V, VSadj = 7.06 kΩ IN_Dx: V_{ID_PP} = 1200 mV, 6Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = H, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H		170	250	mA
I_SD1	Power-down current	OE = L, V_CC = 3.3 V/3.465 V, V_DD = 1.1 V/1.27 V, VSadj = 7.06 kΩ	3.3-V rail	2	5	mA
I_SD1	Power-down current	OE = L, V_CC = 3.3 V/3.465 V, V_DD = 1.1 V/1.27 V, VSadj = 7.06 kΩ	1.1-V rail	3.5	10	mA

(1) The maximum rating is simulated at 3.6-V V_CC and 1.27-V V_DD and at 85°C temperature unless otherwise noted

(2) The typical rating is simulated at 3.3-V V_CC and 1.1-V V_DD and at 27°C temperature unless otherwise noted