ZHCSIK7C July 2018 – June 2025 ESD321
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO < 50nA, across operating temperature range | 3.6 | V | ||
| ILEAKAGE | Leakage current at 3.6V | VIO = 3.6V, I/O to GND | 0.1 | 10 | nA | |
| VBRF | Breakdown voltage, I/O to GND (1) | IIO = 1mA | 4.5 | 7.5 | V | |
| VFWD | Forward Voltage, GND to I/O (1) | IIO = 1mA | 0.8 | V | ||
| VHOLD | Holding voltage, I/O to GND (2) | IIO = 1mA | 5.1 | V | ||
| VCLAMP | Clamping voltage | IPP = 6A (8/20μs Surge), I/O to GND | 6.3 | V | ||
| IPP = 16A (100ns TLP), I/O to GND | 6.8 | V | ||||
| IPP = 16A (100ns TLP), GND to I/O | 4.7 | V | ||||
| RDYN | Dynamic resistance | I/O to GND, 100ns TLP, between 10 to 20A IPP | 0.13 | Ω | ||
| GND to I/O , 100ns TLP, between 10 to 20A IPP | 0.2 | |||||
| CLINE | Line capacitance, IO to GND | VIO = 0V, Vp-p = 30mV, f = 1MHz | 0.9 | 1.1 | pF | |