ZHCSG08E October 2016 – January 2021 DRV8702-Q1 , DRV8703-Q1
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
The voltage or resistance on the IDRIVE pin sets the peak source and peak sink IDRIVE setting as listed in #GUID-F6EAC8A7-6D36-48B0-9E2C-5865E907B824/T4605616-961.
| IDRIVE RESISTANCE | IDRIVE VOLTAGE | SOURCE CURRENT | SINK CURRENT | ||
|---|---|---|---|---|---|
| VVM = 5.5 V | VVM = 13.5 V | VVM = 5.5 V | VVM = 13.5 V | ||
| < 1 kΩ to GND | GND | High-side: 10 mA Low-side: 10 mA | High-side: 10 mA Low-side: 10 mA | High-side: 20 mA Low-side: 20 mA | High-side: 20 mA Low-side: 20 mA |
| 33 kΩ ± 5% to GND | 0.7 V ± 5% | High-side: 20 mA Low-side: 20 mA | High-side: 20 mA Low-side: 20 mA | High-side: 40 mA Low-side: 40 mA | High-side: 40 mA Low-side: 40 mA |
| 200 kΩ ± 5% to GND | 2 V ± 5% | High-side: 50 mA Low-side: 40 mA | High-side: 50 mA Low-side: 45 mA | High-side: 90 mA Low-side: 85 mA | High-side: 95 mA Low-side: 95 mA |
| > 2 MΩ to GND, Hi-Z | 3 V ± 5% | High-side: 145 mA Low-side: 115 mA | High-side: 155 mA Low-side: 130 mA | High-side: 250 mA Low-side: 235 mA | High-side: 265 mA Low-side: 260 mA |
| 68 kΩ ± 5% to AVDD | 4 V ± 5% | High-side: 190 mA Low-side: 145 mA | High-side: 210 mA Low-side: 180 mA | High-side: 330 mA Low-side: 300 mA | High-side: 350 mA Low-side: 350 mA |
| < 1 kΩ to AVDD | AVDD | High-side: 240 mA Low-side: 190 mA | High-side: 260 mA Low-side: 225 mA | High-side: 420 mA Low-side: 360 mA | High-side: 440 mA Low-side:430 mA |