ZHCSG01C February 2017 – August 2018 DRV8320 , DRV8320R , DRV8323 , DRV8323R
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Three Phase Smart Gate Drivers
- 8.3.2 DVDD Linear Voltage Regulator
- 8.3.3 Pin Diagrams
- 8.3.4 Low-Side Current Sense Amplifiers (DRV8323 and DRV8323R Only)
- 8.3.5 Step-Down Buck Regulator
- 8.3.6 Gate Driver Protective Circuits
- 8.4 Device Functional Modes
- 8.5 Programming
- 8.6
Register Maps
- Table 1. DRV832xS and DRV832xRS Register Map
- 8.6.1 Status Registers
- 8.6.2 Control Registers
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1
Primary Application
- 9.2.1.1 Design Requirements
- 9.2.1.2 Detailed Design Procedure
- 9.2.1.3 Application Curves
- 9.2.2 Alternative Application
- 9.2.1
Primary Application
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
12.7 靜電放電警告
ESD 可能會損壞該集成電路。德州儀器 (TI) 建議通過適當的預防措施處理所有集成電路。如果不遵守正確的處理措施和安裝程序 , 可能會損壞集成電路。
ESD 的損壞小至導致微小的性能降級 , 大至整個器件故障。 精密的集成電路可能更容易受到損壞 , 這是因為非常細微的參數更改都可能會導致器件與其發布的規格不相符。