SLVSGC3 May 2020 DRV8210P
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| POWER SUPPLIES (VM, VCC) | ||||||
| IVM | VM active mode current | nSLEEP = 3.3 V, IN1 = 0 V, IN2 = 3.3 V | 1.4 | 3.6 | mA | |
| IVMQ | VM sleep mode current | Sleep mode, VVM = 5 V, VVCC = 3.3 V, TJ = 27°C | 1 | 82 | nA | |
| IVCC | VCC active mode current | nSLEEP = 3.3 V, IN1 = 0 V, IN2 = 3.3 V | 0.18 | 3.6 | mA | |
| IVCCQ | VCC sleep mode current | Sleep mode, VVM = 5 V, VVCC = 3.3 V, TJ = 27°C | 2.5 | nA | ||
| tWAKE | Turnon time | Sleep mode to active mode delay | 100 | μs | ||
| tSLEEP | Turnoff time | Active mode to sleep mode delay | 2 | μs | ||
| LOGIC-LEVEL INPUTS (INx, nSLEEP) | ||||||
| VIL | Input logic low voltage | 0 | 0.4 | V | ||
| VIH | Input logic high voltage | 1.45 | 5.5 | V | ||
| VHYS | Input logic hysteresis | 49 | mV | |||
| IIL | Input logic low current | VI = 0 V | -1 | 1 | μA | |
| IIH | Input logic high current | VI = 3.3 V | 20 | 50 | μA | |
| RPD | Input pulldown resistance | To GND | 100 | kΩ | ||
| DRIVER OUTPUTS (OUTx) | ||||||
| RDS(on)_HS | High-side MOSFET on resistance | IO = 0.2 A, | 525 | mΩ | ||
| RDS(on)_LS | Low-side MOSFET on resistance | IO = –0.2 A, | 525 | mΩ | ||
| VSD | Body diode forward voltage | IO = –0.5 A | 1 | V | ||
| tRISE | Output rise time | VOUTx rising from 10% to 90% of VVM | 150 | ns | ||
| tFALL | Output fall time | VOUTx falling from 90% to 10% of VVM | 150 | ns | ||
| tPD | Input to output propagation delay | Input crosses 0.8 V to VOUTx = 0.1×VVM, IO = 1 A | 135 | ns | ||
| tDEAD | Output dead time | Internal dead time | 500 | ns | ||
| PROTECTION CIRCUITS | ||||||
| VUVLO,VCC | VCC supply undervoltage lockout (UVLO) | Supply rising | 1.65 | V | ||
| Supply falling | 1.30 | V | ||||
| VUVLO_HYS | Supply UVLO hysteresis | Rising to falling threshold | 80 | mV | ||
| tUVLO | Supply undervoltage deglitch time | VVCC falling to OUTx disabled | 3.8 | μs | ||
| IOCP | Overcurrent protection trip point | 1.76 | A | |||
| tOCP | Overcurrent protection deglitch time | 4.2 | μs | |||
| tRETRY | Overcurrent protection retry time | 1.7 | ms | |||
| TTSD | Thermal shutdown temperature | 153 | 193 | °C | ||
| THYS | Thermal shutdown hysteresis | 22 | °C | |||