ZHCSKC0 October 2019 UCC21736-Q1
ADVANCE INFORMATION for pre-production products; subject to change without notice.
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Power Ratings
- 6.6 Electrical Characteristics
- 6.7 Switching Characteristics
- 6.8 Insulation Specifications
- 6.9 Safety-Related Certifications
- 6.10 Safety Limiting Values
- 6.11 Insulation Characteristics Curves
- 6.12 Typical Characteristics
- 7 Parameter Measurement Information
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Power Supply
- 8.3.2 Driver Stage
- 8.3.3 VCC, VDD and VEE Undervoltage Lockout (UVLO)
- 8.3.4 Active Pulldown
- 8.3.5 Short Circuit Clamping
- 8.3.6 External Active Miller Clamp
- 8.3.7 Overcurrent and Short Circuit Protection
- 8.3.8 Fault (FLT, Reset and Enable (RST/EN)
- 8.3.9 ASC Protection and APWM Monitor
- 8.4 Device Functional Modes
-
9 Applications and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Design Requirements
- 9.2.2
Detailed Design Procedure
- 9.2.2.1 Input filters for IN+, IN- and RST/EN
- 9.2.2.2 PWM Interlock of IN+ and IN-
- 9.2.2.3 FLT, RDY and RST/EN Pin Circuitry
- 9.2.2.4 RST/EN Pin Control
- 9.2.2.5 Turn on and turn off gate resistors
- 9.2.2.6 External Active Miller Clamp
- 9.2.2.7 Overcurrent and Short Circuit Protection
- 9.2.2.8 Higher Output Current Using an External Current Buffer
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機(jī)械、封裝和可訂購(gòu)信息
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DW|16
散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
9.2.2.8 Higher Output Current Using an External Current Buffer
To increase the IGBT gate drive current, a non-inverting current buffer (such as the NPN/PNP buffer shown in Figure 54) can be used. Inverting types are not compatible with the desaturation fault protection circuitry and must be avoided. The MJD44H11/MJD45H11 pair is appropriate for peak currents up to 15 A, the D44VH10/ D45VH10 pair is up to 20 A peak.
In the case of a over-current detection, the soft turn off (STO) is activated. External components must be added to implement STO instead of normal turn off speed when an external buffer is used. CSTO sets the timing for soft turn off and RSTO limits the inrush current to below the current rating of the internal FET (10A). RSTO should be at least (VDD-VEE)/10. The soft turn off timing is determined by the internal current source of 400mA and the capacitor CSTO. CSTO is calculated using .
- ISTO is the the internal STO current source, 400mA
- tSTO is the desired STO timing
Figure 54. Current Buffer for Increased Drive Strength