ZHCSTB3A October 2023 – October 2023 TSM24B
PRODUCTION DATA
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO < 100 nA | 24 | V | ||
| ILEAK | Leakage current at VRWM | VIO = 24 V, I/O to GND | 25 | 75 | nA | |
| VBR | Breakdown voltage, I/O to GND (1) | IIO = 10 mA | 26.5 | V | ||
| VFWD | Forward Voltage, GND to I/O (1) | IIO = 10 mA | 0.7 | V | ||
| VCLAMP | Surge clamping voltage, tp = 8/20 μs (2) | IPP = 20 A, I/O to GND | 33 | V | ||
| VCLAMP | Surge clamping voltage, tp = 8/20 μs (2) | IPP = 20 A, GND to I/O | 6 | 8 | V | |
| CLINE | Line capacitance, IO to GND | VIO = 0 V, f = 1 MHz | 24 | 37.5 | pF | |