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ZHCSLB3B April 2020 – May 2025 TPS7B84-Q1

PRODUCTION DATA

封裝選項

請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機械數(shù)據(jù) (封裝 | 引腳)

DCY|4
DRB|8

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

DRB|8
- QFND619

訂購信息

5.5 Electrical Characteristics

specified at T_J = –40°C to +150°C, V_IN= 13.5 V, I_OUT= 0 mA, C_OUT = 2.2 μF, 1 mΩ < C_OUT ESR < 2 Ω, C_IN= 1 μF, and V_EN= 2 V (unless otherwise noted); typical values are at T_J= 25°C

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_OUT	Regulated output accuracy	V_IN = V_OUT+ 500 mV to 40 V, I_OUT = 100 μA to 150 mA ⁽²⁾ ⁽¹⁾	T_J = 25oC	–0.5		0.5	%
V_OUT	Regulated output accuracy		T_J = –40°C to +150oC	–0.75		0.75	%
V_OUT	Regulated output accuracy DCY	V_IN = V_OUT+ 500 mV to 40 V, I_OUT = 100 μA to 150 mA ⁽²⁾ ⁽¹⁾	T_J = 25oC	–0.75		0.75	%
V_OUT	Regulated output accuracy DCY		T_J = –40°C to +150oC	–1		1	%
ΔV_OUT(ΔVIN)	Line regulation	Change in percent of output voltage	V_IN = V_OUT+ 500 mV to 40 V, I_OUT = 100 μA			0.2	%
ΔV_OUT(ΔIOUT)	Load regulation	Change in percent of output voltage	V_IN = V_OUT+ 500 mV, I_OUT = 100 μA to 150 mA, V_OUT ≥ 3.3 V			0.2	%
ΔV_OUT(ΔIOUT)	Load regulation (Adjustable output only)	Change in percent of output voltage	V_IN = V_OUT+ 500 mV, I_OUT = 100 μA to 150 mA, V_OUT < 3.3 V			0.3	%
ΔV_OUT	Load transient response settling time⁽⁴⁾ ⁽⁵⁾	C_OUT = 10 μF	C_OUT = 10 μF			100	μs
	Load transient response overshoot, undershoot⁽⁵⁾		I_OUT = 45 mA to 105 mA	–2%		10%	%V_OUT
	Load transient response overshoot, undershoot⁽⁵⁾		I_OUT = 0 mA to 150 mA	–10%			%V_OUT
I_Q	Quiescent current	V_IN = V_OUT + 500 mV to 40 V, I_OUT = 0 mA ⁽²⁾	T_J = 25oC		18	21	μA
		V_IN = V_OUT + 500 mV to 40 V, I_OUT = 0 mA ⁽²⁾	T_J = –40°C to +150oC			26
		I_OUT = 500 μA ⁽²⁾	T_J = –40°C to +150oC			35
I_SHUTDOWN	Shutdown supply current (I_GND)	V_EN = 0 V	T_J = 25oC			2.5	μA
I_SHUTDOWN	Shutdown supply current (I_GND)	V_EN = 0 V	T_J = –40°C to +150oC			4	μA
V_DO	Dropout voltage (DCY package)	I_OUT ≤ 1 mA, V_OUT ≥ 3.3 V, V_IN= V_OUT(NOM)x 0.95				47	mV
		I_OUT = 105 mA, V_OUT ≥ 3.3 V, V_IN= V_OUT(NOM)			130	180
		I_OUT = 150 mA, V_OUT ≥ 3.3 V, V_IN= V_OUT(NOM)			160	230
V_DO	Dropout voltage (fixed output DRB package)	I_OUT ≤ 1 mA, V_OUT ≥ 3.3 V, V_IN= V_OUT(NOM)x 0.95				43	mV
		I_OUT = 105 mA, V_OUT ≥ 3.3 V, V_IN= V_OUT(NOM)			125	175
		I_OUT = 150 mA, V_OUT ≥ 3.3 V, V_IN= V_OUT(NOM)			155	225
V_DO	Dropout voltage adjustable output DRB package	I_OUT ≤ 1 mA, V_IN = 3 V, V_FB = 0.61 V⁽³⁾				43	mV
	Dropout voltage adjustable output	I_OUT = 105 mA, V_IN = 3 V, V_FB = 0.61 V⁽³⁾			140	195
	Dropout voltage adjustable output	I_OUT = 150 mA, V_IN = 3 V, V_FB = 0.61 V⁽³⁾			175	245
V_FB	Feedback voltage	Reference voltage for FB		0.645	0.65	0.655	V
I_FB	Feedback current			-10		10	nA
V_UVLO(RISING)	Rising input supply UVLO	V_IN rising		2.6	2.7	2.82	V
V_{UVLO(FALLING)}	Falling input supply UVLO	V_IN falling		2.38	2.5	2.6	V
V_UVLO(HYST)	V_UVLO hysteresis				230		mV
V_IL	Enable logic input low level					0.7	V
V_IH	Enable logic input high level			2			V
I_EN	EN pin current	V_EN = V_IN = 13.5 V				50	nA
I_CL	Output current limit	V_IN = V_OUT(nom) + 1 V, V_OUT short to 90% x V_OUT(NOM)		180	220	260	mA
PSRR	Power-supply ripple rejection	V_IN - V_OUT = 500 mV, frequency = 1 kHz, I_OUT = 150 mA			55		dB
V_n	Output noise voltage	V_OUT = 3.3 V, BW = 10 Hz to 100 kHz			280		μV_RMS
T_SD(SHUTDOWN)	Junction shutdown temperature				175		°C
T_SD(HYST)	Hysteresis of thermal shutdown				20		°C

(1) Power dissipation is limited to 2W for IC production testing purposes. The power dissipation can be higher during normal operation. Please see the thermal dissipation section for more information on how much power the device can dissipate while maintaining a junction temperature below 150℃.

(2) For adjustable devices this parameter is tested in unity gain, so resistor divider tolerances and current is not included.

(3) Dropout is not measured for V_IN ≤ 3 V.

(4) The settling time is measured from when I_OUT is stepped from 45mA to 105 mA to when the output voltage recovers to
V_OUT = V_OUT(nom) - 5 mV.

(5) This specification is specified by design.