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ZHCSP75A July 2022 – December 2022 TPS1HC30-Q1

PRODUCTION DATA

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

PWP|14
- MPDS370A

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

PWP|14
- PPTD393A

訂購信息

6.5 Electrical Characteristics

V_BB = 6 V to 28 V, T_A = –40°C to 125°C (unless otherwise noted); Typical application is 13.5 V, 10 ?, RILIM=Open (unless otherwise specified)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
INPUT VOLTAGE AND CURRENT
V_Clamp	VDS clamp voltage		T_J=25°C	35		43	V
V_Clamp	VDS clamp voltage		T_J = –40°C to 150°C	33		45	V
V_UVLOR	V_BB undervoltage lockout rising	Measured with respect to the GND pin of the device		3.0	3.5	4.0	V
V_UVLOF	V_BB undervoltage lockout falling	Measured with respect to the GND pin of the device		2.4	2.6	3.0	V
I_SB	Standby current (total device leakage including MOSFET channel)	V_BB ≤ 18 V, V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V	T_J = 25°C			0.3	μA
			T_J = 85°C			2.5	μA
			T_J = 125°C			9	μA
I_OUT(standby)	Output leakage current	V_BB ≤ 18 V, V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V	T_J = 25°C		0.01	0.3	μA
I_OUT(standby)	Output leakage current	V_BB ≤ 18 V, V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V	T_J = 85°C			2.5	μA
I_DIA	Current consumption in diagnostic mode	V_BB ≤ 18 V, I_SNS = 0 mA V_EN = 0 V, V_{DIA_EN}= 5 V, V_OUT = 0V			1.3	3	mA
I_Q	Quiescent current channel enabled	V_BB ≤ 28 V V_EN = V_{DIA_EN} = 5 V, I_OUTx = 0 A			1.6	3	mA
IL_NOM	Continuous load current	Channel enabled, T_AMB = 85°C			4.5		A
t_STBY	Standby mode delay time	V_ENx = V_{DIA_EN} = 0 V to standby			20		ms
RON CHARACTERISTICS
R_ON	On-resistance (Includes MOSFET channel and metallization on die)	6 V ≤ V_BB ≤ 28 V, I_OUT= 1 A	T_J = 25°C		30		mΩ
		6 V ≤ V_BB ≤ 28 V, I_OUT= 1 A	T_J = 150°C			57	mΩ
		3 V ≤ V_BB ≤ 6 V, I_OUT =1 A	T_J = 25°C			57	mΩ
		3 V ≤ V_BB ≤ 6 V, I_OUT =1 A	T_J = 150°C			75	mΩ
R_ON(REV)	On-resistance during reverse polarity	-18 V ≤ V_BB ≤ -6 V	T_J = 25°C		30		mΩ
R_ON(REV)	On-resistance during reverse polarity	-18 V ≤ V_BB ≤ -6 V	T_J = 150°C			57	mΩ
V_F	Source-to-drain body diode voltage	V_EN = 0 V I_OUT = –1 A		0.3	0.7	1	V
CURRENT SENSE CHARACTERISTICS
K_SNS	Current sense ratio I_OUT / I_SNS	I_OUT= 1.5 A			1560
I_SNSI	Current sense current and accuracy	V_BB > V_{BB_ISNS}, V_EN = V_{DIA_EN} = 5 V	I_OUT = 6 A		3.8		mA
			I_OUT = 6 A	–3		3	%
			I_OUT = 3 A		1.92		mA
			I_OUT = 3 A	–4		4	%
			I_OUT = 1.5 A		0.96		mA
			I_OUT = 1.5 A	–4		4	%
			I_OUT = 750 mA		0.48		mA
			I_OUT = 750 mA	–6		6	%
			I_OUT = 300 mA		0.192		mA
			I_OUT = 300 mA	–10		10	%
			I_OUT = 150 mA		0.096		mA
			I_OUT = 150 mA	–15		15	%
			I_OUT = 75 mA		0.0481		mA
			I_OUT = 75 mA	–25		25	%
			I_OUT = 30 mA		0.0192		mA
			I_OUT = 30 mA	–40		40	%
			I_OUT = 15 mA		0.0096		mA
			I_OUT = 15 mA	–60		60	%
			I_OUT = 7.5 mA		0.0048		mA
			I_OUT = 7.5 mA	-80		80	%
SNS CHARACTERISTICS
V_SNSFH	V_SNSfault high-level	V_{DIA_EN} = 5 V		4.2	5	5.77	V
		V_{DIA_EN} = 3.3 V		3.3	3.5	3.75	V
		V_{DIA_EN} = V_IH		2.8	3.15	3.5	V
I_SNSFH	I_SNSfault high-level	V_{DIA_EN} > V_{IH,DIAG_EN}			6.6		mA
V_{BB_ISNS}	V_BB headroom needed for full current sense and fault functionality	V_{DIAG_EN} = 3.3 V		5.3			V
V_{BB_ISNS}	V_BB headroom needed for full current sense and fault functionality	V_{DIAG_EN} = 5 V		6.5			V
CURRENT LIMIT CHARACTERISTICS
I_{CL_LINPK}	Linear Mode peak	T_J = –40°C to 150°C dI/dt < 0.01 A/ms	R_ILIM = 7.15 kΩ to 71.5 kΩ			1.4 × I_CL	A
I_{CL_ENPS}	Peak current enabling into permanent short	T_J = –40°C to 150°C	R_ILIM = 7.15 kΩ to 71.5 kΩ			2 × I_CL	A
I_OVCR	OVCR Peak current threshold when short is applied while switch enabled	T_J = –40°C to 150°C	R_ILIM ≥ 35 k?			15	A
			15 k? ≤ R_ILIM < 35 k?			23	A
			R_ILIM < 15k?			33	A
I_CL	I_CLCurrent Limit Threshold(3)	T_J = –40°C to 150°C, VDS = 3 V	R_ILIM = GND	9.1	13	16.9	A
I_CL	I_CLCurrent Limit Threshold(3)	T_J = –40°C to 150°C, VDS = 3 V	R_ILIM = open, or out of range		5		A
K_CL	Current Limit Ratio⁽¹⁾	T_J = –40°C to 150°C, VDS = 3 V	R_ILIM = 7.15 kΩ	65.6	87.5	109.4	A * kΩ
			R_ILIM = 25 kΩ	76.5	90	103.5	A * kΩ
			R_ILIM = 71.5 kΩ	69	95	115	A * kΩ
FAULT CHARACTERISTICS
R_VOL	Open-load (OL) detection internal pull-up resistor	V_EN = 0 V, V_{DIA_EN} = 5 V			150		kΩ
t_OL	Open-load (OL) detection deglitch time	V_EN = 0 V, V_{DIA_EN} = 5 V, When V_BB – V_OUT < V_OL, duration longer than t_OL. Openload detected.			400	1000	μs
V_OL	Open-load (OL) detection voltage	V_EN = 0 V, V_{DIA_EN} = 5 V				1.5	V
V_FLT	FLT low output voltage	I_FLT = 2.5 mA				0.5	V
t_OL1	OL and STB indication-time from EN falling	V_EN= 5 V to 0 V, V_{DIA_EN} = 5 V I_OUT = 0 mA, V_OUT = V_BB - V_OL			500	1000	μs
t_OL2	OL and STB indication-time from DIA_EN rising	V_EN = 0 V, V_{DIA_EN} = 0 V to 5 V I_OUT= 0 mA, V_OUT = V_BB - V_OL				1000	μs
T_ABS	Thermal shutdown				165		°C
T_REL	Relative thermal shutdown				85		°C
T_HYS	Thermal shutdown hysteresis				25		°C
t_{FAULT_FLT}	Fault indication-time	V_{DIA_EN} = 5 V Time between fault and FLT asserting				60	μs
t_{FAULT_SNS}	Fault indication-time	V_{DIA_EN} = 5 V Time between fault and I_SNS settling at V_SNSFH				60	μs
t_RETRY	Retry time	Time from fault shutdown until switch re-enable (thermal shutdown).		1	2	3	ms
EN PIN CHARACTERISTICS
V_{IL, EN}	Input voltage low-level	No GND Network				0.8	V
V_{IH, EN}	Input voltage high-level	No GND Network		1.5			V
V_{IHYS, EN}	Input voltage hysteresis				280		mV
R_EN	Internal pulldown resistor			200	350	500	kΩ
I_{IL, EN}	Input current low-level	V_EN = 0.8 V			2.2		μA
I_{IH, EN}	Input current high-level	V_EN = 5 V			14		μA
DIA_EN PIN CHARACTERISTICS
V_{IL, DIA_EN}	Input voltage low-level	No GND Network				0.8	V
V_{IH, DIA_EN}	Input voltage high-level	No GND Network		1.5			V
V_{IHYS, DIA_EN}	Input voltage hysteresis				280		mV
R_{DIA_EN}	Internal pulldown resistor			100	250	500	kΩ
I_{IL, DIA_EN}	Input current low-level	V_{DIA_EN} = 0.8 V			2.2		μA
I_{IH, DIA_EN}	Input current high-level	V_{DIA_EN} = 5 V			14		μA
LATCH PIN Characteristics
V_{IL, LATCH}	Input voltage low-level	No GND Network				0.8	V
V_{IH, LATCH}	Input voltage high-level	No GND Network		1.5			V
V_{IHYS, LATCH}	Input voltage hysteresis				280		mV
R_LATCH	Internal pulldown resistor			0.7	1	1.3	MΩ
I_{IL, LATCH}	Input current low-level	V_LATCH = 0.8 V			2.2		μA
I_{IH, LATCH}	Input current high-level	V_LATCH = 5 V			14		μA

(1) Current limit regulation value will vary with increase of VDS voltage. For more information, see Section 8.3.2