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ZHCSLK6B July 2021 – February 2025 TPS1HC100-Q1

PRODUCTION DATA

封裝選項

請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機械數(shù)據(jù) (封裝 | 引腳)

PWP|14

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

PWP|14
- PPTD393A

訂購信息

5.5 Electrical Characteristics

V_BB = 6 V to 28 V, T_A = -40°C to 125°C (unless otherwise noted); Typical application is 13.5V, 10?, RILIM=Open (unless otherwise specified)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
INPUT VOLTAGE AND CURRENT
V_Clamp	VDS clamp voltage		T_J=25°C	35		43	V
V_Clamp	VDS clamp voltage		T_J = -40°C to 150°C	33		45	V
V_UVLOR	V_BB undervoltage lockout rising	Measured with respect to the GND pin of the device		3.0	3.5	4.0	V
V_UVLOF	V_BB undervoltage lockout falling	Measured with respect to the GND pin of the device		2.4	2.6	3.0	V
I_SB	Standby current (total device leakage including MOSFET channel)	V_BB ≤ 28 V, V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V	T_J = 25°C			0.3	μA
I_SB		V_BB ≤ 28 V, V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V	T_J = 85°C			0.5	μA
I_NOM	Continuous load current, per channel	Channel enabled, T_AMB = 85°C			2		A
I_OUT(standby)	Output leakage current	V_BB ≤ 28 V, T_J = 25°C V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V			0.01	0.1	μA
I_OUT(standby)	Output leakage current	V_BB ≤ 28 V, T_J = 85°C V_EN = V_{DIA_EN} = 0 V, V_OUT = 0 V				0.3	μA
I_DIA	Current consumption in diagnostic mode	V_BB ≤ 28 V, I_SNS = 0 mA V_EN = 0 V, V_{DIA_EN}= 5 V, V_OUT = 0V			1.3	1.5	mA
I_Q	Quiescent current channel enabled	V_BB ≤ 28 V V_EN = V_{DIA_EN} = 5 V, I_OUTx = 0 A			1.6	2.5	mA
t_STBY	Standby mode delay time	V_ENx = V_{DIA_EN} = 0 V to standby			20		ms
RON CHARACTERISTICS
R_ON	On-resistance (Includes MOSFET channel and metallization on die)	6 V ≤ V_BB ≤ 28 V, I_OUT= 1 A	T_J = 25°C		88		mΩ
		6 V ≤ V_BB ≤ 28 V, I_OUT= 1 A	T_J = 150°C			176	mΩ
		3V ≤ V_BB ≤ 6V, I_OUT =1A	T_J = 25°C			190	mΩ
		3V ≤ V_BB ≤ 6V, I_OUT =1A	T_J = 150°C			250	mΩ
R_ON(REV)	On-resistance during reverse polarity	-18 V ≤ V_BB ≤ -6 V	T_J = 25°C		94		mΩ
R_ON(REV)	On-resistance during reverse polarity	-18 V ≤ V_BB ≤ -6 V	T_J = 150°C			188	mΩ
CURRENT SENSE CHARACTERISTICS
K_SNS	Current sense ratio I_OUT / I_SNS	I_OUT= 1 A			1040
I_{SAT_SNS}	Saturated sense current level	Maximum amount of load current that can be sensed			6		A
I_SNSI	Current sense current and accuracy	V_EN = V_{DIA_EN} = 5 V, VBB ≥ 6 V	I_OUT = 4 A		3.87		mA
		V_EN = V_{DIA_EN} = 5 V, VBB ≥ 6 V	I_OUT = 4 A	–6		6	%
		V_EN = V_{DIA_EN} = 5 V, VBB ≥ 5 V	I_OUT = 2 A		1.93		mA
			I_OUT = 2 A	–6		6	%
			I_OUT = 1 A		0.96		mA
			I_OUT = 1 A	–6		6	%
			I_OUT = 500 mA		0.48		mA
			I_OUT = 500 mA	–6		6	%
			I_OUT = 200 mA		0.192		mA
			I_OUT = 200 mA	–6		6	%
			I_OUT = 100 mA		0.096		mA
			I_OUT = 100 mA	–6		6	%
			I_OUT = 50 mA		0.048		mA
			I_OUT = 50 mA	–7		7	%
			I_OUT = 20 mA		0.0192		mA
			I_OUT = 20 mA	–15		15	%
			I_OUT = 10 mA		0.0096		mA
			I_OUT = 10 mA	–40		40	%
			I_OUT = 5 mA		0.0048		mA
			I_OUT = 5 mA	–70		70	%
SNS CHARACTERISTICS
V_SNSFH	V_SNSfault high-level	V_{DIA_EN} = 5 V		4.75	5	5.5	V
V_SNSFH	V_SNSfault high-level	V_{DIA_EN} = 3.3 V		3.3	3.5	3.75	V
V_SNSFH	V_SNSfault high-level	V_{DIA_EN} = V_IH		2.8	3.15	3.5	V
I_SNSFH	I_SNSfault high-level	V_{DIA_EN} > V_{IH,DIAG_EN}			6.6		mA
I_SNSleak	I_SNS leakage	V_{DIA_EN} = 5 V, IL = 0 mA	T_A = 25℃			1.8	μA
I_SNSleak	I_SNS leakage	V_{DIA_EN} = 5 V, IL = 0 mA	T_A = 125℃			2.2	μA
V_{BB_ISNS}	V_BB headroom needed for full current sense and fault functionality	V_{DIAG_EN} = 3.3V		5.3			V
V_{BB_ISNS}	V_BB headroom needed for full current sense and fault functionality	V_{DIAG_EN} = 5V		6.5			V
CURRENT LIMIT CHARACTERISTICS
I_{CL_LINPK}	Linear Mode peak	T_J = -40°C to 150°C dI/dt < 0.01 A/ms	I_ILIM = 0.7A to 7A	0.9 × I_CL		1.4 × I_CL	A
I_{CL_ENPS}	Peak current enabling into permanent short	T_J = -40°C to 150°C	R_ILIM = 7.15K to 71.5K			2 × I_CL	A
I_OVCR	OVCR Peak current threshold when short is applied while switch enabled	T_J = -40°C to 150°C	R_ILIM > 35k?			6.5	A
			15k? ≤ R_ILIM ≤ 35k?			9.5	A
			R_ILIM < 15k?			16	A
I_CL	I_CLCurrent Limit Threshold	T_J = -40°C to 150°C	R_ILIM = GND	5	7	9	A
I_CL	I_CLCurrent Limit Threshold	T_J = -40°C to 150°C	R_ILIM = open, or out of range		3		A
K_CL	Current Limit Ratio	T_J = -40°C to 150°C	R_ILIM = 7.15 kΩ	36.34	44.3	55.41	A * kΩ
			R_ILIM = 25 kΩ	45	48.5	57.25	A * kΩ
			R_ILIM = 71.5 kΩ	36.75	49	61.26	A * kΩ
FAULT CHARACTERISTICS
R_VOL	Open-load (OL) detection internal pull-up resistor	V_EN = 0 V, V_{DIA_EN} = 5 V			150		kΩ
t_OL	Open-load (OL) detection deglitch time	V_EN = 0 V, V_{DIA_EN} = 5 V, When V_BB – V_OUT < V_OL, duration longer than t_OL. Openload detected.			350	1000	μs
V_OL	Open-load (OL) detection voltage	V_EN = 0 V, V_{DIA_EN} = 5 V			2	2.5	V
V_FLT	FLT low output voltage	I_FLT = 2.5 mA				0.5	V
t_OL1	OL and STB indication-time from EN falling	V_EN= 5 V to 0 V, V_{DIA_EN} = 5 V I_OUT = 0 mA, V_OUT = V_BB - V_OL			350	1000	μs
t_OL2	OL and STB indication-time from DIA_EN rising	V_EN = 0 V, V_{DIA_EN} = 0 V to 5 V I_OUT= 0 mA, V_OUT = V_BB - V_OL				1000	μs
T_ABS	Thermal shutdown				165		°C
T_REL	Relative thermal shutdown				60		°C
T_HYS	Thermal shutdown hysteresis				25		°C
t_{FAULT_FLT}	Fault indication-time	V_{DIA_EN} = 5 V Time between fault and FLT asserting				60	μs
t_{FAULT_SNS}	Fault indication-time	V_{DIA_EN} = 5 V Time between fault and I_SNS settling at V_SNSFH				60	μs
t_RETRY	Retry time	Time from fault shutdown until switch re-enable (thermal shutdown).		1	2	3	ms
EN PIN CHARACTERISTICS
V_{IL, EN}	Input voltage low-level	No GND Network				0.8	V
V_{IH, EN}	Input voltage high-level	No GND Network		1.5			V
V_{IHYS, EN}	Input voltage hysteresis				280		mV
R_EN	Internal pulldown resistor			200	350	500	kΩ
I_{IL, EN}	Input current low-level	V_EN = 0.8 V			2.2		μA
I_{IH, EN}	Input current high-level	V_EN = 5 V			14		μA
DIA_EN PIN CHARACTERISTICS
V_{IL, DIA_EN}	Input voltage low-level	No GND Network				0.8	V
V_{IH, DIA_EN}	Input voltage high-level	No GND Network		1.5			V
V_{IHYS, DIA_EN}	Input voltage hysteresis				280		mV
R_{DIA_EN}	Internal pulldown resistor			100	250	450	kΩ
I_{IL, DIA_EN}	Input current low-level	V_{DIA_EN} = 0.8 V			3.2		μA
I_{IH, DIA_EN}	Input current high-level	V_{DIA_EN} = 5 V			20		μA
LATCH PIN Characteristics
V_{IL, LATCH}	Input voltage low-level	No GND Network				0.8	V
V_{IH, LATCH}	Input voltage high-level	No GND Network		1.5			V
V_{IHYS, LATCH}	Input voltage hysteresis				280		mV
R_LATCH	Internal pulldown resistor			0.5	1	1.5	MΩ
I_{IL, LATCH}	Input current low-level	V_{DIA_EN} = 0.8 V			2.2		μA
I_{IH, LATCH}	Input current high-level	V_{DIA_EN} = 5 V			5		μA