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ZHCSLK6B July 2021 – February 2025 TPS1HC100-Q1

PRODUCTION DATA

封裝選項

請參考 PDF 數據表獲取器件具體的封裝圖。

機械數據 (封裝 | 引腳)

PWP|14

散熱焊盤機械數據 (封裝 | 引腳)

PWP|14
- PPTD393A

訂購信息

5.8 Typical Characteristics

All the following data are based on the mean value of the three lots samples, V_VBB = 13.5 V if not specified.

TPS1HC100-Q1 Transient Thermal Impedance

Figure 5-1 Transient Thermal Impedance

TPS1HC100-Q1 Output Leakage Current IOUT,STBY vs Temperature

V_OUT = 0 V	V_EN = 0 V	V_{DIAG_EN} = 0 V
V_BB Varied

Figure 5-3 Output Leakage Current I_OUT,STBY vs Temperature

TPS1HC100-Q1 Diagnostic Current IDIA vs Temperature

I_OUT = 0 A	V_EN = 0 V	V_{DIAG_EN} = 5 V
V_BB Varied

Figure 5-5 Diagnostic Current I_DIA vs Temperature

I_OUT = 1 A	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB Varied

Figure 5-7 R_DSON vs V_BB

R_OUT = 5μH and 100 mΩ	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB = 13.5 V

Figure 5-9 K_CL vs Temperature

I_OUT = 1A	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB varied	R_SNS = 1 kΩ

Figure 5-11 KSNS Error vs VBB

R_OUT = 5μH and 100 mΩ	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB varied	R_SNS = 1 kΩ

Figure 5-13 VSNSFH (5 V) vs VBB

TPS1HC100-Q1 Turn
off time TOFF vs Temperature

R_OUT = 10 Ω	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB varied	R_SNS = 1 kΩ

Figure 5-15 Turn off time T_OFF vs Temperature

TPS1HC100-Q1 Falling Slew Rate SRF vs Temperature

R_OUT = 10 Ω	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB varied	R_SNS = 1 kΩ

Figure 5-17 Falling Slew Rate SRF vs Temperature

R_OUT = 1 kΩ	V_EN = 3.3 to 0 V	V_{DIAG_EN} = 3.3 to 0 V
V_BB varied	R_SNS = 1 kΩ

Figure 5-19 V_IL vs Temperature

R_OUT = 10 Ω	V_EN = 5 to 0 V	V_{DIAG_EN} = 0 V
V_BB = 13.5 V	R_SNS = 1 kΩ

Figure 5-21 Turn-off Time (t_OFF)

TPS1HC100-Q1 Short
Circuit With ILIM Shorted to Ground

R_OUT = 5 μH and 100 mΩ	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB = 13.5 V	R_SNS = 1 kΩ	R_ILIM = GND

Figure 5-23 Short Circuit With ILIM Shorted to Ground

TPS1HC100-Q1 470-μF Capacitive Load Driving

R_OUT = 470 μF and 10 Ω	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB = 13.5 V	R_SNS = 1 kΩ	R_ILIM = open

Figure 5-25 470-μF Capacitive Load Driving

TPS1HC100-Q1 Standby Current ISB vs. Temperature

V_OUT = 0 V	V_EN = 0 V	V_{DIAG_EN} = 0 V
V_BB Varied

Figure 5-2 Standby Current I_SB vs. Temperature

TPS1HC100-Q1 Quiescent Current IQ vs Temperature

I_OUT = 0 A	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB Varied

Figure 5-4 Quiescent Current I_Q vs Temperature

I_OUT = 1 A	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB Varied

Figure 5-6 R_DSON vs Temperature

I_OUT = 1 A	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB Varied

Figure 5-8 R_ONREV vs Temperature

R_OUT varied	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB = 13.5 V	R_SNS = 1 kΩ

Figure 5-10 KSNS Error vs Temperature

R_OUT = 5μH and 100 mΩ	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB varied	R_SNS = 1 kΩ

Figure 5-12 VSNSFH (3.3 V) vs VBB

TPS1HC100-Q1 Turn
on time TON vs Temperature

R_OUT = 10 Ω	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB varied	R_SNS = 1 kΩ

Figure 5-14 Turn on time T_ON vs Temperature

TPS1HC100-Q1 Rising Slew Rate SRR vs Temperature

R_OUT = 10 Ω	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB varied	R_SNS = 1 kΩ

Figure 5-16 Rising Slew Rate SRR vs Temperature

R_OUT = 1 kΩ	V_EN = 0 to 3.3 V	V_{DIAG_EN} = 0 to 3.3 V
V_BB varied	R_SNS = 1 kΩ

Figure 5-18 V_IH vs Temperature

R_OUT = 10 Ω	V_EN = 0 to 5 V	V_{DIAG_EN} = 0 V
V_BB = 13.5 V	R_SNS = 1 kΩ

Figure 5-20 Turn-on Time (t_ON)

TPS1HC100-Q1 ISNS
Settling Time (tSNSION) on Load Step

I_OUT = 500 mA to 3 A	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB = 13.5 V	R_SNS = 1 kΩ

Figure 5-22 ISNS Settling Time (t_SNSION) on Load Step

R_OUT = 5 mH	V_EN = 5 V	V_{DIAG_EN} = 5 V
V_BB = 13.5 V	R_SNS = 1 kΩ	R_ILIM = GND

Figure 5-24 5mH Inductive Load Driving