ZHCSGV4J September 2017 – November 2024 TLV7031 , TLV7032 , TLV7034 , TLV7041 , TLV7042 , TLV7044
PRODUCTION DATA
- 1
- 1 特性
- 2 應用
- 3 說明
- 4 Pin Configuration and Functions
-
5 Specifications
- 5.1 Absolute Maximum Ratings
- 5.2 ESD Ratings
- 5.3 Recommended Operating Conditions
- 5.4 Thermal Information (Single)
- 5.5 Thermal Information (Dual)
- 5.6 Thermal Information (Quad)
- 5.7 Electrical Characteristics (Single)
- 5.8 Switching Characteristics (Single)
- 5.9 Electrical Characteristics (Dual)
- 5.10 Switching Characteristics (Dual)
- 5.11 Electrical Characteristics (Quad)
- 5.12 Switching Characteristics (Quad)
- 5.13 Timing Diagrams
- 5.14 Typical Characteristics
- 6 Detailed Description
- 7 Application and Implementation
- 8 Device and Documentation Support
- 9 Revision History
- 10Mechanical, Packaging, and Orderable Information
封裝選項
機械數據 (封裝 | 引腳)
散熱焊盤機械數據 (封裝 | 引腳)
- RTE|16
訂購信息
6.4.2 Internal Hysteresis
The device hysteresis transfer curve is shown in Figure 6-1. This curve is a function of three components: VTH, VOS, and VHYST:
- VTH is the actual set voltage or threshold trip voltage.
- VOS is the internal offset voltage between VIN+ and VIN–. This voltage is added to VTH to form the actual trip point at which the comparator must respond to change output states.
- VHYST is the internal hysteresis (or
trip window) that is designed to reduce comparator
sensitivity to noise
(7mV for both TLV703x and TLV704x).
Figure 6-1 Hysteresis Transfer Curve