ZHCSIT4B September 2018 – April 2024 LM5164-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| IQ-SHUTDOWN | VIN shutdown current | VEN = 0 V | 3 | 15 | μA | |
| IQ-SLEEP1 | VIN sleep current | VEN = 2.5 V, VFB = 1.5 V | 10.5 | 25 | μA | |
| IQ-ACTIVE | VIN active current | VEN = 2.5 V | 600 | 880 | μA | |
| EN/UVLO | ||||||
| VSD-RISING | Shutdown threshold | VEN/UVLO rising | 1.1 | V | ||
| VSD-FALLING | Shutdown threshold | VEN/UVLO falling | 0.45 | V | ||
| VEN-RISING | Enable threshold | VEN/UVLO rising | 1.45 | 1.5 | 1.55 | V |
| VEN-FALLING | Enable threshold | VEN/UVLO falling | 1.35 | 1.4 | 1.44 | V |
| FEEDBACK | ||||||
| VREF | FB regulation voltage | VFB falling | 1.181 | 1.2 | 1.218 | V |
| TIMING | ||||||
| tON1 | On-time1 | VVIN = 6 V, RRON = 75 kΩ | 5000 | ns | ||
| tON2 | On-time2 | VVIN = 6 V, RRON = 25 kΩ | 1650 | ns | ||
| tON3 | On-time3 | VVIN = 12 V, RRON = 75 kΩ | 2550 | ns | ||
| tON4 | On-time4 | VVIN = 12 V, RRON = 25 kΩ | 830 | ns | ||
| PGOOD | ||||||
| VPG-UTH | FB upper threshold for PGOOD high to low | VFB rising | 1.105 | 1.14 | 1.175 | V |
| VPG-LTH | FB lower threshold for PGOOD high to low | VFB falling | 1.055 | 1.08 | 1.1 | V |
| VPG-HYS | PGOOD upper and lower threshold hysteresis | VFB falling | 60 | mV | ||
| RPG | PGOOD pulldown resistance | VFB = 1 V | 30 | Ω | ||
| BOOTSTRAP | ||||||
| VBST-UV | Gate drive UVLO | VBST rising | 2.7 | 3.4 | V | |
| POWER SWITCHES | ||||||
| RDSON-HS | High-side MOSFET RDSON | ISW = –100 mA | 0.725 | Ω | ||
| RDSON-LS | Low-side MOSFET RDSON | ISW = 100 mA | 0.33 | Ω | ||
| SOFT START | ||||||
| tSS | Internal soft-start time | 1.75 | 3 | 4.75 | ms | |
| CURRENT LIMIT | ||||||
| IPEAK1 | Peak current limit threshold (HS) | 1.25 | 1.5 | 1.75 | A | |
| IPEAK2 | Peak current limit threshold (LS) | 1.25 | 1.5 | 1.75 | A | |
| IDELTA-ILIM | Min of (IPEAK1 or IPEAK2) minus IVALLEY | 200 | 300 | mA | ||
| IVALLEY | Valley current limit threshold | 0.95 | 1.2 | 1.4 | A | |
| THERMAL SHUTDOWN | ||||||
| TSD | Thermal shutdown threshold | TJ rising | 175 | °C | ||
| TSD-HYS | Thermal shutdown hysteresis | 10 | °C | |||