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ZHCSCS1D June 2014 – November 2020 DRV8801A-Q1

PRODUCTION DATA

封裝選項

機械數據 (封裝 | 引腳)

RMJ|16
- MPQF389

散熱焊盤機械數據 (封裝 | 引腳)

RMJ|16
- QFND494

訂購信息

6.5 Electrical Characteristics

T_A = 25°C, over recommended operating conditions (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
POWER SUPPLIES (V_BB)
V_BB	V_BB operating supply voltage			6.5		36	V
I_BB	V_BB operating supply current	?_PWM < 50 kHz			6		mA
I_BB	V_BB operating supply current	Charge pump on, Outputs disabled			3.2		mA
I_BB(Q)	V_BB sleep-mode supply current	nSLEEP = 0, T_J = 25°C				10	μA
CONTROL INPUTS (PHASE, ENABLE, MODE1, MODE2, nSLEEP)
V_IL	Input logic low voltage	PHASE, ENABLE MODE1, MODE2				0.8	V
V_IH	Input logic high voltage	PHASE, ENABLE MODE1, MODE2		2			V
I_IL	Input logic low current	PHASE, MODE1, MODE2	V_I = 0.8 V	–20	≤ –2	20	μA
I_IH	Input logic high current	PHASE, MODE1, MODE2	V_I = 2 V		< 1	20	μA
I_IL	Input logic low current	ENABLE	V_I = 0.8 V		16	40	μA
I_IH	Input logic high current	ENABLE	V_I = 2 V		40	100	μA
V_IL	Input logic low voltage	nSLEEP				0.8	V
V_IH	Input logic high voltage			2.7			V
I_IL	Input logic low current		V_I = 0.8 V		< 1	10	μA
I_IH	Input logic high current		V_I = 2 V		27	50	μA
CONTROL OUTPUTS (nFAULT)
V_OL	Output logic low voltage	I_O = 1 mA				0.4	V
DMOS DRIVERS (OUTA, OUTB, SENSE, VPROPI)
r_DS(on)	Output ON resistance	Source driver, I_O = –2.8 A, T_J = 25°C , V_BB = 6.5 to 36 V			0.48		?
		Source driver, I_O = –2.8 A, T_J = 125°C, V_BB = 8 to 36 V			0.74	0.85
		Source driver, I_O = –2.8 A, T_J = 125°C, V_BB = 6.5 to 8 V			0.74	0.9
		Sink driver, I_O = 2.8 A, T_J = 25°C, V_BB = 6.5 to 36 V			0.35
		Sink driver, I_O = 2.8 A, T_J = 125°C, V_BB = 8 to 36 V			0.52	0.7
		Sink driver, I_O = 2.8 A, T_J = 125°C, V_BB = 6.5 to 8 V			0.52	0.75
V_(TRIP)	SENSE trip voltage	R_(SENSE) between SENSE and GND		450	500	550	mV
V_f	Body diode forward voltage	Source diode, I_f = –2.8 A				1.4	V
V_f	Body diode forward voltage	Sink diode, I_f = 2.8 A				1.4	V
t_pd	Propagation delay time	Input edge to source or sink ON			600		ns
t_pd	Propagation delay time	Input edge to source or sink OFF			100		ns
t_COD	Crossover delay				500		ns
G_D(a)	Differential amplifier gain	V_BB = 8 to 36 V; SENSE = 0.1 to 0.4 V		4.8	5	5.2	V/V
G_D(a)	Differential amplifier gain	V_BB = 6.5 to 8 V; SENSE = 0.1 to 0.3 V		4.8		5.2	V/V
PROTECTION CIRCUITS
VUV	UVLO threshold	V_BB increasing			5.5	6.4	V
VUV	UVLO threshold	V_BB decreasing				5.7	V
	UVLO hysteresis			500		850	mV
I_(OCP)	Overcurrent protection trip level	V_BB = 8 to 36 V		3			A
I_(OCP)	Overcurrent protection trip level	V_BB = 6.5 to 8 V		2.8			A
t_(DEG)	Overcurrent deglitch time				3		μs
t_(OCP)	Overcurrent retry time			0.5	1.2	3	ms
T_(OTW)	Thermal warning temperature	Die temperature T_J			160		°C
T_hys(OTW)	Thermal warning hysteresis	Die temperature T_J			15		°C
T_(OTS)	Thermal shutdown temperature	Die temperature T_J			175		°C
T_hys(OTS)	Thermal shutdown hysteresis	Die temperature T_J			15		°C