ZHCSIN3A August 2018 – June 2019 DRV8350 , DRV8350R , DRV8353 , DRV8353R
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Three Phase Smart Gate Drivers
- 8.3.2 DVDD Linear Voltage Regulator
- 8.3.3 Pin Diagrams
- 8.3.4 Low-Side Current-Shunt Amplifiers (DRV8353 and DRV8353R Only)
- 8.3.5 Step-Down Buck Regulator
- 8.3.6
Gate Driver Protective Circuits
- 8.3.6.1 VM Supply and VDRAIN Undervoltage Lockout (UVLO)
- 8.3.6.2 VCP Charge-Pump and VGLS Regulator Undervoltage Lockout (GDUV)
- 8.3.6.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
- 8.3.6.4 VSENSE Overcurrent Protection (SEN_OCP)
- 8.3.6.5 Gate Driver Fault (GDF)
- 8.3.6.6 Overcurrent Soft Shutdown (OCP Soft)
- 8.3.6.7 Thermal Warning (OTW)
- 8.3.6.8 Thermal Shutdown (OTSD)
- 8.3.6.9 Fault Response Table
- 8.4 Device Functional Modes
- 8.5 Programming
- 8.6
Register Maps
- 8.6.1 Status Registers
- 8.6.2
Control Registers
- 8.6.2.1 Driver Control Register (address = 0x02h)
- 8.6.2.2 Gate Drive HS Register (address = 0x03h)
- 8.6.2.3 Gate Drive LS Register (address = 0x04h)
- 8.6.2.4 OCP Control Register (address = 0x05h)
- 8.6.2.5 CSA Control Register (DRV8353 and DRV8353R Only) (address = 0x06h)
- 8.6.2.6 Driver Configuration Register (DRV8353 and DRV8353R Only) (address = 0x07h)
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1
Primary Application
- 9.2.1.1 Design Requirements
- 9.2.1.2
Detailed Design Procedure
- 9.2.1.2.1 External MOSFET Support
- 9.2.1.2.2 IDRIVE Configuration
- 9.2.1.2.3 VDS Overcurrent Monitor Configuration
- 9.2.1.2.4 Sense-Amplifier Bidirectional Configuration (DRV8353 and DRV8353R)
- 9.2.1.2.5 Single Supply Power Dissipation
- 9.2.1.2.6 Single Supply Power Dissipation Example
- 9.2.1.2.7 Buck Regulator Configuration (DRV8350R and DRV8353R)
- 9.2.1.3 Application Curves
- 9.2.2 Alternative Application
- 9.2.1
Primary Application
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機(jī)械、封裝和可訂購信息
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RTV|32
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RTV|32
訂購信息
9.2.1.2.4 Sense-Amplifier Bidirectional Configuration (DRV8353 and DRV8353R)
The sense amplifier gain on the DRV8353 and DRV8353R devices and sense resistor value are selected based on the target current range, VREF reference voltage, sense-resistor power rating, and operating temperature range. In bidirectional operation of the sense amplifier, the dynamic range at the output is approximately calculated as shown in Equation 21.
Equation 21. 
Use Equation 22 to calculate the approximate value of the selected sense resistor with VO calculated using Equation 21.
Equation 22. 
From Equation 21 and Equation 22, select a target gain setting based on the power rating of the target sense resistor.