ZHCSIN3A August 2018 – June 2019 DRV8350 , DRV8350R , DRV8353 , DRV8353R
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Three Phase Smart Gate Drivers
- 8.3.2 DVDD Linear Voltage Regulator
- 8.3.3 Pin Diagrams
- 8.3.4 Low-Side Current-Shunt Amplifiers (DRV8353 and DRV8353R Only)
- 8.3.5 Step-Down Buck Regulator
- 8.3.6
Gate Driver Protective Circuits
- 8.3.6.1 VM Supply and VDRAIN Undervoltage Lockout (UVLO)
- 8.3.6.2 VCP Charge-Pump and VGLS Regulator Undervoltage Lockout (GDUV)
- 8.3.6.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
- 8.3.6.4 VSENSE Overcurrent Protection (SEN_OCP)
- 8.3.6.5 Gate Driver Fault (GDF)
- 8.3.6.6 Overcurrent Soft Shutdown (OCP Soft)
- 8.3.6.7 Thermal Warning (OTW)
- 8.3.6.8 Thermal Shutdown (OTSD)
- 8.3.6.9 Fault Response Table
- 8.4 Device Functional Modes
- 8.5 Programming
- 8.6
Register Maps
- 8.6.1 Status Registers
- 8.6.2
Control Registers
- 8.6.2.1 Driver Control Register (address = 0x02h)
- 8.6.2.2 Gate Drive HS Register (address = 0x03h)
- 8.6.2.3 Gate Drive LS Register (address = 0x04h)
- 8.6.2.4 OCP Control Register (address = 0x05h)
- 8.6.2.5 CSA Control Register (DRV8353 and DRV8353R Only) (address = 0x06h)
- 8.6.2.6 Driver Configuration Register (DRV8353 and DRV8353R Only) (address = 0x07h)
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1
Primary Application
- 9.2.1.1 Design Requirements
- 9.2.1.2
Detailed Design Procedure
- 9.2.1.2.1 External MOSFET Support
- 9.2.1.2.2 IDRIVE Configuration
- 9.2.1.2.3 VDS Overcurrent Monitor Configuration
- 9.2.1.2.4 Sense-Amplifier Bidirectional Configuration (DRV8353 and DRV8353R)
- 9.2.1.2.5 Single Supply Power Dissipation
- 9.2.1.2.6 Single Supply Power Dissipation Example
- 9.2.1.2.7 Buck Regulator Configuration (DRV8350R and DRV8353R)
- 9.2.1.3 Application Curves
- 9.2.2 Alternative Application
- 9.2.1
Primary Application
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
9.2.1.2.3.1 VDS Overcurrent Example
The goal of this example is to set the VDS monitor to trip at a current greater than 75 A. According to the CSD19535KCS 100 V N-Channel NexFET™ Power MOSFET data sheet, the RDS(on) value is 2.2 times higher at 175°C, and the maximum RDS(on) value at a VGS of 10 V is 3.6 mΩ at TA = 25°C. From these values, the approximate worst-case value of RDS(on) is 2.2 × 3.6 mΩ = 7.92 mΩ.
Using Equation 19 with a value of 7.92 mΩ for RDS(on) and a worst-case motor current of 75 A, Equation 20 shows the calculated desired value of the VDS overcurrent monitors.
For this example, the value of VDS_OCP was selected as 0.6 V.
The SPI devices allow for adjustment of the deglitch time for the VDS overcurrent monitor. The deglitch time can be set to 1 µs, 2 µs, 4 µs, or 8 µs.