ZHCSQ75C June 2022 – March 2023 UCC28C50-Q1 , UCC28C51-Q1 , UCC28C52-Q1 , UCC28C53-Q1 , UCC28C54-Q1 , UCC28C55-Q1 , UCC28C56H-Q1 , UCC28C56L-Q1 , UCC28C57H-Q1 , UCC28C57L-Q1 , UCC28C58-Q1 , UCC28C59-Q1
PRODUCTION DATA
- 1 特性
- 2 應用
- 3 說明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3 Feature Description
- 8.4 Device Functional Modes
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Design Requirements
- 9.2.2
Detailed Design Procedure
- 9.2.2.1 Primary-to-Secondary Turns Ratio of the Flyback Transformer (NPS)
- 9.2.2.2 Primary Magnetizing Inductance of the Flyback Transformer (LM)
- 9.2.2.3 Number of Turns of the Flyback Transformer Windings
- 9.2.2.4 Current Sense Resistors (R24, R25) and Current Limiting
- 9.2.2.5 Primary Clamp Circuit (D7, D1, D3, R2, R28) to Limit Voltage Stress
- 9.2.2.6 Primary-Side Current Stress and Input Capacitor Selection
- 9.2.2.7 Secondary-Side Current Stress and Output Capacitor Selection
- 9.2.2.8 VDD Capacitors (C12, C18)
- 9.2.2.9 Gate Drive Network (R14, R16, Q6)
- 9.2.2.10 VREF Capacitor (C18)
- 9.2.2.11 RT/CT Components (R12, C15)
- 9.2.2.12 HV Start-Up Circuitry for VDD (Q1, Q2, D2, D4, D6, D8, R5)
- 9.2.2.13 Desensitization to CS-pin Noise by RC Filtering, Leading-Edge Blanking, and Slope Compensation
- 9.2.2.14 Voltage Feedback Compensation
- 9.2.3 Application Curves
- 9.3 PCB Layout Recommendations
- 9.4 Power Supply Recommendations
- 10Device and Documentation Support
- 11Mechanical, Packaging, and Orderable Information
3 說明
UCC28C5x-Q1 系列器件為高性能電流模式 PWM 控制器，可用于驅動各種應用中的 Si 和 SiC MOSFET。UCC28C5x-Q1 系列是 UCC28C4x-Q1 的更高效、更穩健的版本。
除持續支持 Si MOSFET 的現有 UVLO 閾值 (UCC28C50-55-Q1) 外，UCC28C5x-Q1 系列還具有可確保 SiC MOSFET 可靠運行的新 UVLO 閾值 (UCC28C56-59-Q1)。
VDD 絕對最大額定電壓從 20V 增加至 30V，便于以理想方式驅動 20Vgs、18Vgs 或 15Vgs SiC MOSFET 的柵極，同時可無需使用外部 LDO。
器件性能改進
| 參數 | UCC28C4x-Q1 | UCC28C5x-Q1 |
|---|---|---|
| 52kHz 時的電源電流 | 2.3mA | 1.3mA |
| 啟動電流（上限值） | 100μA | 75μA |
| VDD 絕對上限值 | 20V | 30V |
| 基準電壓精度 | ±2% | ±1% |
| Si FET 的 UVLO 和 DMAX | 6 個選項 | 6 個選項 |
| SiC FET 的 UVLO 和 DMAX | none | 6 個選項 |
- 如需了解所有可用封裝，請參閱數據表末尾的可訂購產品附錄。
圖 3-1 典型汽車應用