The Gate resistors R_ON and R_OFF are sized to reduce ringing caused by parasitic inductances and capacitances and also to limit the current coming out of the gate driver.  For this design 3Ω R_ON and 1Ω R_OFF resistors were selected.

• R_ON/R_OFF: External gate resistors
• V_BOOT: Forward voltage drop of external bootstrap diode
• V_GDF: Forward voltage drop of external antiparallel diode
• R_OL/R_OH: Gate driver pulldown/pullup resistance from datasheet
• R_NMOS: Effective resistance of pullup NMOS in hybrid structure
• R_{G_int}: Power transistor internal gate resistance, found in power transistor datasheet

Maximum HO Drive Current (I_HO(src)):

Maximum HO Sink Current (I_HO(sk)):

Maximum LO Drive Current (I_LO(src)):

Maximum LO Sink Current (I_LO(sk)):

The external gate driver resistors, R_ON and R_OFF, are used to:

1. Limit ringing caused by parasitic inductances/capacitances in the gate drive loop.
2. Limit ringing caused by high voltage/current switching dV/dt, dI/dt, and body-diode reverse recovery.
3. Fine-tune gate drive strength, for example peak sink and source current to optimize the switching loss.
4. Reduce electromagnetic interference (EMI) related to switching.