ZHCSLZ9C August 2020 – January 2024 UCC21732
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Pin Configuration and Functions
-
5 Specifications
- 5.1 Absolute Maximum Ratings
- 5.2 ESD Ratings
- 5.3 Recommended Operating Conditions
- 5.4 Thermal Information
- 5.5 Power Ratings
- 5.6 Insulation Specifications
- 5.7 Safety-Related Certifications
- 5.8 Safety Limiting Values
- 5.9 Electrical Characteristics
- 5.10 Switching Characteristics
- 5.11 Insulation Characteristics Curves
- 5.12 Typical Characteristics
- 6 Parameter Measurement Information
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Power Supply
- 7.3.2 Driver Stage
- 7.3.3 VCC and VDD Undervoltage Lockout (UVLO)
- 7.3.4 Active Pulldown
- 7.3.5 Short Circuit Clamping
- 7.3.6 External Active Miller Clamp
- 7.3.7 Overcurrent and Short Circuit Protection
- 7.3.8 2-Level Turn-Off
- 7.3.9 Fault ( FLT, Reset and Enable ( RST/EN)
- 7.3.10 Isolated Analog to PWM Signal Function
- 7.4 Device Functional Modes
-
8 Applications and Implementation
- 8.1 Application Information
- 8.2
Typical Application
- 8.2.1 Design Requirements
- 8.2.2
Detailed Design Procedure
- 8.2.2.1 Input Filters for IN+, IN- and RST/EN
- 8.2.2.2 PWM Interlock of IN+ and IN-
- 8.2.2.3 FLT, RDY and RST/EN Pin Circuitry
- 8.2.2.4 RST/EN Pin Control
- 8.2.2.5 Turn-On and Turn-Off Gate Resistors
- 8.2.2.6 External Active Miller Clamp
- 8.2.2.7 Overcurrent and Short Circuit Protection
- 8.2.2.8 Isolated Analog Signal Sensing
- 8.2.2.9 Higher Output Current Using an External Current Buffer
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Revision History
- 13Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DW|16
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DW|16
訂購信息
8.2.2.9 Higher Output Current Using an External Current Buffer
To increase the IGBT gate drive current, a non-inverting current buffer (such as the NPN/PNP buffer shown in Figure 8-17) can be used. Inverting types are not compatible with the desaturation fault protection circuitry and must be avoided. The MJD44H11/MJD45H11 pair is appropriate for peak currents up to 15 A, the D44VH10/ D45VH10 pair is up to 20-A peak.
In the case of a overcurrent detection, the soft turn off (STO) is activated. External components must be added to implement STO instead of normal turn off speed when an external buffer is used. CSTO sets the timing for soft turn off and RSTO limits the inrush current to below the current rating of the internal FET (10A). RSTO should be at least (VDD-VEE)/10. The soft turn off timing is determined by the internal current source of 400 mA and the capacitor CSTO. CSTO is calculated using the following equation.
- ISTO is the the internal STO current source, 400 mA
- tSTO is the desired STO timing
Figure 8-17 Current Buffer for Increased
Drive Strength