ZHCSTR8 June 2025 TPSI2260-Q1
ADVANCE INFORMATION
| 參數 | 測試條件 | 最小值 | 典型值 | 最大值 | 單位 | |
|---|---|---|---|---|---|---|
| 初級側電源電壓 (VDD) | ||||||
| VUVLO | VDD 欠壓閾值 | VDD 上升 |
4.1 | 4.3 | 4.5 | V |
| VDD 下降 | 4.0 | 4.2 | 4.4 | V | ||
| 遲滯 | 40 | 100 | 150 | mV | ||
| IVDD_ON | VDD 電流，器件上電 | VEN = 5V TJ = 25°C | 5 | 11 | mA | |
| VEN = 5V–40°C ≤ TJ ≤ 150°C | 5 | 12 | mA | |||
| IVDD_OFF | VDD 電流，5V，器件斷電 | VVDD = 5V，VEN = 0V TJ = 25°C | 4 | 8 | μA | |
| VVDD = 5V，VEN = 0V TJ = 105°C | 6.3 | 11 | μA | |||
| VVDD = 5V，VEN = 0V TJ = 125°C | 7.6 | 16 | μA | |||
| VVDD = 5V，VEN = 0V –40°C ≤ TJ ≤ 150°C | 30 | μA | ||||
| VDD 電流，20V，器件斷電 | VVDD = 20V，VEN = 0V TJ = 25°C | 9.2 | 10.5 | μA | ||
| VVDD = 20V，VEN = 0V TJ = 105°C | 13 | 17 | ||||
| VVDD = 20V，VEN = 0V TJ = 125°C | 15 | 25 | ||||
| VVDD = 20V，VEN = 0V –40°C ≤ TJ ≤ 150°C | 40 | |||||
| FET 特性（S1、S2） | ||||||
| RDSON | 導通電阻 | IO = 2mA，TJ = 25°C | 65 | 88 | Ω | |
| IO = 2mA，TJ = 85°C | 88 | 120 | ||||
| IO = 2mA，TJ = 105°C | 96 | 125 | ||||
| IO = 2mA，TJ = 125°C | 105 | 140 | ||||
| IO = 2mA，–40°C ≤ TJ ≤ 150°C | 150 | |||||
| IOFF | 關斷泄漏，600V | V = +/–600V，TJ = 25°C | 0.058 | 0.25 | μA | |
| V = +/–600V，TJ = 85°C | 0.5 | |||||
| V = +/–600V，TJ = 105°C | 1.5 | |||||
| V = +/–600V，TJ = 125°C | 6 | |||||
| V = +/–600V，–40°C ≤ TJ ≤ 150°C | 50 | |||||
| 關斷泄漏，500V | V = +/–500V，TJ = 25°C | 0.055 | 0.25 | μA | ||
| V = +/–500V，TJ = 85°C | 0.43 | |||||
| V = +/–500V，TJ = 105°C | 1.22 | |||||
| V = +/–500V，TJ = 125°C | 5.75 | |||||
| V = +/–500V，–40°C ≤ TJ ≤ 150°C | 44 | |||||
| VAVA | 雪崩電壓 | IO = 10μA，TJ = 25°C | 650 | 770 | V | |
| IO = 100μA，TJ = 150°C | 650 | 770 | ||||
| COSS | S1、S2 電容 | VS1,S2 = 0V，SM 懸空，F = 1MHz | 188 | pF | ||
| TTAP1 | 熱雪崩保護閾值 |
置為有效 | 155 | C | ||
| TTAP_END | 熱雪崩保護閾值 |
置為無效 | 85 | 125 | C | |
| 邏輯電平輸入 (EN | ||||||
| VIL | 輸入邏輯低電平電壓 | 0.0 | 0.8 | V | ||
| VIH | 輸入邏輯高電平電壓 | 2.1 | 20.0 | V | ||
| VHYS | 輸入邏輯遲滯 | 100 | 250 | 300 | mV | |
| IIL | 輸入邏輯低電平電流 | VEN = 0V | -0.1 | 0.1 | μA | |
| VEN = 0.8V | 0.1 | 0.68 | 1.8 | μA | ||
| IIH | 輸入邏輯高電流 | VEN = 10V | 6.0 | 13.5 | 30 | μA |
| IIH | 輸入邏輯高電流 | VEN = 5V | 1.5 | 4.5 | 12 | μA |
| VEN = 20V | 15 | 32 | 65 | μA | ||
| IVDD_FS | VDD 失效防護電流 | VEN = 20V，VVDD = 0V | -0.1 | 0 | 0.1 | μA |
| RPD | 智能下拉電阻 | 兩點測量，VEN = 0.5V 且 VEN = 0.8V | 550 | 1180 | 2100 | kΩ |
| 噪聲抗擾度 | ||||||
| CMTI | 共模瞬態抗擾度 | |VCM| = 500V | 100 | V/ns | ||