| Input voltage on VCCIO and VCC7 (VIN) |
VOUT = 1.5 V, 1.8 V, or 2.5 V |
2.7 |
|
5.5 |
V |
| VOUT = 3.3 V |
VOUT |
|
5.5 |
| DC output voltage (VOUT) |
PWM mode (VIO_PSKIP = 0)
or pulse skip mode IOUT = 0 to IMAX |
VSEL= 00 |
–3% |
1.5 |
3% |
V |
| VSEL = 01 |
–3% |
1.8 |
3% |
| VSEL = 10 |
–3% |
2.5 |
3% |
| VSEL = 11 |
–3% |
3.3 |
3% |
| Power down |
|
0 |
|
| Rated output current (IOUTmax) |
ILMAX[1:0] =11 |
VIO output voltage = 1.5 V |
1300 |
|
|
mA |
| VIO output voltage = 1.8 V |
1200 |
|
|
| VIO output voltage = 2.5 V |
1100 |
|
|
| VIO output voltage = 3.3 V |
1100 |
|
|
| P-channel MOSFET |
VIN = VINmin |
|
300 |
|
mΩ |
| On-resistance (RDS(ON)_PMOS) |
VIN = 3.8 V |
|
250 |
400 |
| P-channel leakage current (ILK_PMOS) |
VIN = VINMAX, SWIO = 0 V |
|
|
2 |
µA |
N-channel MOSFET
On-resistance (RDS(ON)_NMOS) |
VIN = VMIN |
|
300 |
|
mΩ |
| VIN = 3.8 V |
|
250 |
400 |
| N-channel leakage current (ILK_NMOS) |
VIN = VINmax, SWIO = VINmax |
|
|
2 |
µA |
| PMOS current limit (high-side) |
Source current load,
VIN = VINmin to VINmax |
ILMAX[1:0] = 00 |
650 |
|
|
mA |
| ILMAX[1:0] = 01 |
1200 |
|
|
| ILMAX[1:0] = 10 |
1700 |
|
|
| NMOS current limit (low-side) |
Source current load
VIN = VINmin to VINmax |
ILMAX[1:0] = 00 |
650 |
|
|
mA |
| ILMAX[1:0] = 01 |
1200 |
|
|
| ILMAX[1:0] = 10 |
1700 |
|
|
Sink current load
VIN = VINmin to VINmax |
ILMAX[1:0] = 00 |
800 |
|
|
| ILMAX[1:0] = 01 |
1200 |
|
|
| ILMAX[1:0] = 10 |
1700 |
|
|
| DC load regulation |
On mode, IOUT = 0 to IOUTmax |
|
|
20 |
mV |
| DC line regulation |
On mode, VIN = VINmin to VINmax
at IOUT = IOUTmax |
|
|
20 |
mV |
| Transient load regulation |
VIN = 3.8 V, VOUT = 1.8 V
IOUT = 0 to 500 mA, maximum slew = 100 mA/µs
IOUT = 700 to 1200 mA, maximum slew = 100 mA/µs |
|
|
50 |
mV |
| Turnon time, ton |
IOUT = 200 mA |
|
350 |
|
µs |
| Overshoot |
SMPS turned on |
|
3% |
|
|
| Power-save mode ripple voltage |
PFM (Pulse skip mode) mode, IOUT = 1 mA |
|
0.025 × VOUT |
|
VPP |
| Switching frequency |
|
2.7 |
3 |
3.3 |
MHz |
| Duty cycle |
|
|
|
100% |
|
| Minimum on time (TON(MIN)) |
P-channel MOSFET |
|
35 |
|
ns |
| Discharge resistor for power-down sequence (RDIS) |
|
|
30 |
50 |
Ω |
| VFBIO internal resistance |
|
0.5 |
1 |
|
MΩ |
| Ground current (IQ) |
Off |
|
|
1 |
µA |
| PWM mode, IOUT = 0 mA, VIN = 3.8 V, VIO_PSKIP = 0 |
|
7500 |
|
| PFM (pulse skipping) mode, no switching, 3-MHz clock on |
|
250 |
|
Low-power (pulse skipping) mode,
no switching ST[1:0] = 11 |
|
63 |
|
| Conversion efficiency |
PWM mode, DCRL < 50 mΩ,
VOUT = 1.8 V, VIN = 3.6 V: |
IOUT = 10 mA |
|
40% |
|
|
| IOUT = 100 mA |
|
83% |
|
| IOUT = 400 mA |
|
85% |
|
| IOUT = 800 mA |
|
80% |
|
| IOUT = 1200 mA |
|
75% |
|
PFM mode, DCRL < 50 mΩ,
VOUT = 1.8 V, VIN = 3.6 V |
IOUT = 1 mA |
|
68% |
|
| IOUT = 10 mA |
|
80% |
|
| IOUT = 400 mA |
|
85% |
|