ZHCSI09S June 2010 – August 2018 TPS65911
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|
| Hot-die temperature rising threshold | THERM_HDSEL[1:0] = 00 | 117 | °C | ||
| THERM_HDSEL[1:0] = 01 | 121 | ||||
| THERM_HDSEL[1:0] = 10 | 113 | 125 | 136 | ||
| THERM_HDSEL[1:0] = 11 | 130 | ||||
| Hot-die temperature hysteresis | 10 | °C | |||
| Thermal shutdown temperature rising threshold | 136 | 148 | 160 | °C | |
| Thermal shutdown temperature hysteresis | 10 | °C | |||
| Ground current | Device in ACTIVE state, Temperature = 27°C, VCC7 = 3.8 V | 6 | µA |