ZHCSJN5A February 2018 – April 2019 TPS2HB50-Q1
ADVANCE INFORMATION for pre-production products; subject to change without notice.
Figure 15 shows the schematic of a typical application for the TPS2HB50-Q1. It includes all standard external components. This section of the datasheet discusses the considerations in implementing commonly required application functionality.
| COMPONENT | TYPICAL VALUE | PURPOSE |
|---|---|---|
| RPROT | 15 kΩ | Protect microcontroller and device I/O pins |
| RSNS | 1 kΩ | Translate the sense current into sense voltage |
| CSNS | 100 pF - 10 nF | Low-pass filter for the ADC input |
| RGND | 4.7 kΩ | Stabilize GND potential during turn-off of inductive load |
| DGND | BAS21 Diode | Protects device during reverse battery |
| RILIM | 5 kΩ - 25 kΩ | Set current limit threshold |
| CVBB | 220 nF to Device GND | Filtering of voltage transients (for example, ESD, ISO7637-2) and improved emissions |
| 100 nF to Module GND | Stabilize the input supply and filter out low frequency noise. | |
| COUT | 22 nF | Filtering of voltage transients (for example, ESD, ISO7637-2) |
| CGND | 1 µF from Device GND to Module GND | Optional capacitance to help with RF immunity. |