ZHCSNR4B May 2021 – April 2022 TPS25946
PRODUCTION DATA
- 1 特性
- 2 應用
- 3 說明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Undervoltage Lockout (UVLO and UVP)
- 8.3.2 Overvoltage Lockout (OVLO)
- 8.3.3 Inrush Current, Overcurrent, and Short-Circuit Protection
- 8.3.4 Analog Load Current Monitor
- 8.3.5 Reverse Current Protection
- 8.3.6 Overtemperature Protection (OTP)
- 8.3.7 Fault Response and Indication (FLT)
- 8.3.8 Power Good Indication (PG)
- 8.3.9 Input Supply Good Indication (SPLYGD)
- 8.4 Device Functional Modes
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9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Design Requirements
- 9.2.2
Detailed Design Procedure
- 9.2.2.1 Device Selection
- 9.2.2.2 Setting Overvoltage Threshold
- 9.2.2.3 Setting Output Voltage Rise Time (tR)
- 9.2.2.4 Setting Power Good Assertion Threshold
- 9.2.2.5 Setting Overcurrent Threshold (ILIM)
- 9.2.2.6 Setting Overcurrent Blanking Interval (tITIMER)
- 9.2.2.7 Selecting External Bias Resistor (R5)
- 9.2.2.8 Selecting External Diode (D1)
- 9.2.3 Application Curve
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
12.5 Electrostatic Discharge Caution
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |