ZHCSPB6E July 2022 – April 2025 TPS1211-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY VOLTAGE | ||||||
| V(VS) | Operating input voltage | 3.5 | 40 | V | ||
| V(VS_PORR) | VS POR threshold, rising | 2.75 | 3 | 3.2 | V | |
| V(VS_PORF) | VS POR threshold, falling | 2.65 | 2.9 | 3.1 | V | |
| I(Q) | Total System Quiescent current, I(GND) | V(EN/UVLO) = 2 V | 613 | 700 | μA | |
| I(SHDN) | SHDN current, I(GND) | V(EN/UVLO) = 0 V, V(SRC) = 0 V | 0.9 | 5.36 | μA | |
| V(EN/UVLO) = 0 V, V(SRC) = 0 V, –40℃ < Tj < 85℃ | 0.9 | 2.65 | μA | |||
| ENABLE AND UNDERVOLTAGE LOCKOUT (EN/UVLO) INPUT | ||||||
| V(UVLOR) | UVLO threshold voltage, rising | 1.16 | 1.18 | 1.2 | V | |
| V(UVLOF) | UVLO threshold voltage, falling | 1.1 | 1.11 | 1.13 | V | |
| V(ENR) | Enable threshold voltage for low IQ shutdown, rising | 1 | V | |||
| V(ENF) | Enable threshold voltage for low IQ shutdown, falling | 0.3 | V | |||
| I(EN/UVLO) | Enable input leakage current | V(EN/UVLO) = 12 V | 61 | 320 | nA | |
| OVER VOLTAGE PROTECTION (OV) INPUT - TPS12110-Q1 and TPS12112-Q1 Only | ||||||
| V(OVR) | Overvoltage threshold input, risIng | TPS12110-Q1 and TPS12112-Q1 Only | 1.16 | 1.18 | 1.2 | V |
| V(OVF) | Overvoltage threshold input, falling | 1.1 | 1.11 | 1.13 | V | |
| I(OV) | OV Input leakage current | 0 V < V(OV) < 5 V | 60 | 300 | nA | |
| CHARGE PUMP (BST–SRC) | ||||||
| I(BST) | Charge Pump Supply current | V(BST – SRC) = 10 V | 80 | 100 | 126 | μA |
| V(BST – SRC) | Charge Pump Turn ON voltage | 11 | 11.7 | 12.3 | V | |
| Charge Pump Turn OFF voltage | 11.6 | 12.3 | 13 | V | ||
| V(BST_UVLOR) | V(BST – SRC) UVLO voltage threshold, rising | 7 | 7.6 | 8.1 | V | |
| V(BST_UVLOF) | V(BST – SRC) UVLO voltage threshold, falling | 6 | 6.5 | 6.9 | V | |
| V(BST – SRC) | Charge Pump Voltage at V(VS) = 3.5 V | 8.6 | V | |||
| GATE DRIVER OUTPUTS (PU, PD, G) | ||||||
| R(PD) | Pull-Down Resistance | 0.69 | 1.34 | ? | ||
| I(PU) | Peak Source Current | 3.75 | A | |||
| I(PD) | Peak Sink Current | 4 | A | |||
| I(G) | Gate charge (sourcing) current, on state | TPS12111-Q1 Only | 72 | 100 | 140 | μA |
| Gate discharge (sinking) current, off state | 92 | 131 | 190 | mA | ||
| CURRENT SENSE AND OVER CURRENT PROTECTION (CS+, CS–, IMON, ISCP, IWRN) | ||||||
| V(OS_SET) | Input referred offset (VSNS to V(IMON) scaling) | RSET = 100 ?, RIMON = 5 k?, 10 k? (corresponds to VSNS = 6 mV to 30 mV) Gain of 45 and 90 respectively. | –200 | 200 | μV | |
| V(GE_SET) | Gain error (VSNS to V(IMON) scaling) | –1.27 | 1.27 | % | ||
| V(IMON_Acc) | IMON accuracy | VSNS = 30 mV, RSET = 100 ?, RIMON = 10 k? | –2 | 2 | % | |
| VSNS = 6 mV, RSET = 100 ?, RIMON = 5 k? | –5 | 5 | % | |||
| V(SNS_WRN) | Overcurrent protection (OCP) voltage threshold | RSET = 100 ?, RIWRN = 39.7 k? | 29.2 | 30.6 | 31.5 | mV |
| RSET = 100 ?, RIWRN = 120 k? | 8 | 10 | 12 | mV | ||
| I(ISCP) | SCP Input Bias current | 13.7 | 15.6 | 17.6 | μA | |
| V(SNS_SCP) | Short-circuit protection (SCP) voltage threshold | RISCP = 2.1 k? | 35 | 40 | 45 | mV |
| RISCP = 750 ? | 19 | mV | ||||
| DELAY TIMER (TMR) | ||||||
| I(TMR_SRC_CB) | TMR source current | 73 | 82 | 91 | μA | |
| I(TMR_SRC_FLT) | TMR source current | 2.1 | 2.5 | 3.3 | μA | |
| I(TMR_SNK) | TMR sink current | 2.1 | 2.5 | 3 | μA | |
| V(TMR_OC) | TMR voltage threshold for over current shutdown | 1.112 | 1.2 | 1.3 | V | |
| V(TMR_FLT) | TMR voltage threshold for FLT_T assertion | 1.03 | 1.1 | 1.2 | V | |
| V(TMR_LOW) | Voltage at TMR pin for AR counter falling threshold | 0.15 | 0.2 | 0.22 | V | |
| INPUT CONTROLS (INP, INP_G), FAULT FLAGS (FLT_I, FLT_T) | ||||||
| R(FLT_I) | FLT_I Pull-down resistance | 54 | 70 | 90 | ? | |
| R(FLT_T) | FLT_T Pull-down resistance | 70 | ? | |||
| I(FLT_T) | FLT Input leakage current | 400 | nA | |||
| V(INP_H) | 1.6 | 2 | V | |||
| V(INP_L) | 0.8 | 1.2 | V | |||
| V(INP_Hys) | 400 | mV | ||||
| V(INP_G_H) | TPS12111-Q1 Only | 1.6 | 2 | V | ||
| V(INP_G_L) | 0.8 | 1.2 | V | |||
| V(INP_G_Hys) | 400 | mV | ||||
| TEMPERATURE SENSING AND PROTECTION (DIODE) | ||||||
| I(DIODE) | External diode current source | High level | 160 | μA | ||
| Low level | 10 | μA | ||||
| Diode current ratio | 15.4 | 16 | 16.6 | A/A | ||
| T(DIODE_TSD_rising) | DIODE sense TSD rising threshold | With MMBT3904 BJT for sensing | 140 | 150 | 160 | ℃ |